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參數(shù)資料
| 型號： | TDA8035HN/C1 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PQCC32 |
| 封裝： | 5 X 5 MM, 0.85 MM HEIGHT, PLASTIC, SOT617-7, HVQFN-32 |
| 文件頁數(shù)： | 16/32頁 |
| 文件大小： | 908K |
| 代理商： | TDA8035HN/C1 |
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TDA8035HN
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1.0 — 19 April 2011
23 of 32
NXP Semiconductors
TDA8035HN
Smart card interface
[1]
To meet these specifications, VCC should be decoupled to CGND using two ceramic multilayer capacitors of low ESR with values of
either 220 nF.
[2]
The transition time and the duty factor definitions are shown in Figure 12 on page 23.; d=t1/(t1+ t2)
[3]
PRESN and CMDVCCN are active LOW; RSTIN is active HIGH; for CLKDIV1 and CLKDIV2 see Table 4.
Tsd
shutdown temperature
at die
-
150
-
°C
IOlim
output current limit
on pin I/O
15
-
+15
mA
on pin CLK
70
-
+70
mA
on pin RST
20
-
+20
mA
on pin VCC = 5 V or 1.8 V
90
125
160
mA
on pin VCC = 3 V
90
160
260
mA
Isd
shutdown current
on pin VCC = 5 V or 1.8 V
80
115
150
mA
on pin VCC = 3 V
80
150
250
mA
Timings
tact
activation time
1847
-
3390
μs
tdeact
deactivation time
35
90
250
μs
tact
activation time
time of the window for sending CLK
to the card with XTAL1
1992
2690
3653
μs
2055
2766
3749
μs
tdeb
debouncing time
on pin PRESN
2.96
4.05
5.55
ms
Table 7.
Characteristics of IC …continued
VDDP = 3.3 V; VDD(INTF) = 3.3 V; fXtal = 10 MHz; GND = 0 V; Tamb=25 °C; unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Fig 12. Definition of output and input transition times
fce666
10%
90%
10%
tr
tf
t1
t2
VOH
(VOH + VOL) /2
VOL
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