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參數(shù)資料
| 型號： | TDA8035HN/C1 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PQCC32 |
| 封裝： | 5 X 5 MM, 0.85 MM HEIGHT, PLASTIC, SOT617-7, HVQFN-32 |
| 文件頁數(shù)： | 15/32頁 |
| 文件大?。?/td> | 908K |
| 代理商： | TDA8035HN/C1 |
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TDA8035HN
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1.0 — 19 April 2011
22 of 32
NXP Semiconductors
TDA8035HN
Smart card interface
Io
output current
inactive mode &
at grounded pin CLK
--
1mA
VOL
LOW level output voltage
IOL = 200 μA0
-
0.3
V
IOL = 70 mA (current limit)
VCC 0.4 -
VCC
V
VOH
HIGH level output voltage IOH = 200 μA
0.9 VCC
-VCC
V
IOH = 70 mA (current limit)
0
-
0.4
V
tr
rise time
-
16
ns
tf
fall time
-
16
ns
fCLK
frequency on pin CLK
operational
0
-
20
MHz
duty cycle
45
-
55
%
SR
slew rate
rise and fall; CL =30pF; VCC
= +5 V
0.2
-
V/ns
rise and fall; CL =30pF; VCC
= +3 V
0.12
-
V/ns
rise and fall; CL =30pF; VCC
= +1.8 V
0.072
-
V/ns
Control inputs (pins CS, CMDVCCN, CLKDIV1, CLKDIV2, RSTIN, EN_5V/ 3VN, EN_1.8VN) [3]
VIL
LOW-level input voltage
0.3
-
0.3
VDD(INTF)
V
VIH
HIGH-level input voltage
0.7
VDD(INTF)
-VDD(INTF)
+ 0.3
V
Vhys
hysteresis voltage
on control input
0.05
VDD(INTF)
-
0.25
VDD(INTF)
V
ILL
LOW-level input leakage
current
VIL = 0
-
1
μA
ILH
HIGH-level input leakage
current
VIH = VDD(INTF)
--
1
μA
Card presence input (PRESN); PRESN has an integrated pull down resistor [3]
VIL
LOW-level input voltage
0.3
-
0.3
VDD(INTF)
V
VIH
HIGH-level input voltage
0.7
VDD(INTF)
-VDD(INTF)
+ 0.3
V
Vhys
hysteresis voltage
0.05
VDD(INTF)
-0.1
VDD(INTF)
V
ILL
LOW-level input leakage
current
VIL = 0
-
1
μA
ILH
HIGH-level input leakage
current
VIH = VDD(INTF)
--
5
μA
OFFN output (pin OFFN is an NMOS drain with a 10k pull up resistor to VDD(INTF))
VOL
LOW level output voltage
IOL =2mA
0
-
0.3
V
VOH
HIGH level output voltage IOH = 15 μA
0.75
VDD(INTF)
-V
Rpu
pull-up resistance
8
10
12
k
Ω
Protections and limitations
Table 7.
Characteristics of IC …continued
VDDP = 3.3 V; VDD(INTF) = 3.3 V; fXtal = 10 MHz; GND = 0 V; Tamb=25 °C; unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
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