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參數(shù)資料
| 型號(hào)： | S71WS512N80BFIZZ0 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動(dòng)存儲(chǔ)芯片的CMOS 1.8伏特 |
| 文件頁(yè)數(shù)： | 56/142頁(yè) |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BFIZZ0 |
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56
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
S71WS512NE0BFWZZ_00_ A1 June 28, 2004
A d v a n c e I n f o r m a t i o n
When the Embedded Program algorithm is complete, the device then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
eration Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored.
Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress.
Note that a
hard-
ware reset
immediately terminates the program operation. The program
command sequence should be reinitiated once the device has returned to the
read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. Program-
ming to the same word address multiple times without intervening erases is
limited. For such application requirements, please contact your local Spansion
representative.
Any word cannot be programmed from “0” back to a “1.”
Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was successful. However, a succeeding
read will show that the data is still “0.” Only erase operations can convert a “0”
to a “1.”
Write Buffer Programming Command Sequence
Write Buffer Programming Sequence allows for faster programming compared to
the standard Program Command Sequence. Write Buffer Programming allows the
system to write 32 words in one programming operation. See the "
Write Buffer
Programming Operation
" section for the program command sequence.
Table 18. Write Buffer Command Sequence
Sequence
Address
555
2AA
Data
00AA
0055
0025h
Comment
Unlock Command 1
Unlock Command 2
Write Buffer Load
Specify the Number of Program
Locations
Not required in the Unlock Bypass mode
Same as above
Starting Address
Starting Address
Word Count
Number of locations to program minus 1 (must be
32 - 1 = 31)
All addresses must be within write-buffer-page
boundaries, but do not have to be loaded in any
order
Load 1st data word
Starting Address
Program Data
Load next data word
Write Buffer
Location
...
Write Buffer
Location
Program Data
Same as above
...
...
Same as above
Load last data word
Program Data
Same as above
Write Buffer Program Confirm
Sector Address
0029h
This command must follow the last write buffer
location loaded, or the operation will ABORT
Device goes busy
Status monitoring through DQ
pins (Perform Data Bar Polling on
the
Last Loaded Address
)
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| S71WS512N80BFWZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S71WS512N80BFIZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFIZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
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