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參數(shù)資料
| 型號(hào)： | S71WS512N80BFIZZ0 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動(dòng)存儲(chǔ)芯片的CMOS 1.8伏特 |
| 文件頁(yè)數(shù)： | 18/142頁(yè) |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BFIZZ0 |
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18
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
S71WS512NE0BFWZZ_00_ A1 June 28, 2004
A d v a n c e I n f o r m a t i o n
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions. The device also offers
two types of data protection at the sector level. When at V
IL
,
WP#
locks the
four outermost boot sectors at the top of memory and four outermost boot sec-
tors at the bottom of memory.
When the ACC pin = V
IL
, the entire flash memory array is protected.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby mode
. Power consump-
tion is greatly reduced in both modes.
Spansion
TM
Flash memory products combine years of Flash memory manufactur-
ing experience to produce the highest levels of quality, reliability and cost
effectiveness. The device electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunnelling. The data is programmed using hot
electron injection.
相關(guān)PDF資料 |
PDF描述 |
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| S71WS512N80BFIZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFIZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71WS512N80BFIZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFIZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFWZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
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