參數(shù)資料
型號(hào)： S6D0110
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD
中文描述： 132的RGB源
文件頁(yè)數(shù)： 97/108頁(yè)
文件大小： 595K
代理商： S6D0110
S6D0110 132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
Preliminary
97
A/C TIMING
Following diagram indicates the A/C timing on the each A/C drive method. After every 1 drawing, the A/C timing is
occurred on the reversed frame AC drive. After the A/C timing, the blank (all gate output: Vgoff level) period
described below is inserted. When it is on the interlace drive, blank period is inserted every A/C timing. When the
reversed n-raster-row is driving, a blank period is inserted after all screens are drawn. Front and Back porch can be
adjusted using FP3-0 and BP3-0 bits (R08h). In interlace drive mode, Blank period can be adjusted using BLP13-
0 and BLP23-0 bit (R09h).
Blank period = Back porch
+ Blank period 1
+ Blank period 2
+ Front porch
Frame 1
Frame reverse AC drive
1
Field 1
A/C
A/C
A/C
Blank period = Back porch
+ Front Porch
3 field interlace drive
n-raster-row reversed AC drive
Front porch
Back porch
A/C
timing
1
Front porch
Field 2
Field 3
Blank period 2 (BLP2)
Blank period 1 (BLP1)
Back porch
A/C
1
Front porch
Back porch
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
n-raster-row
Blank period = Back porch
+ Front Porch
n-raster-row
n-raster-row
n-raster-row
n-raster-row
n-raster-row
n-raster-row
n-raster-row
n-raster-row
n-raster-row
Figure 50. A/C timing
相關(guān)PDF資料
PDF描述
S6D0114 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6D0114 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S6D04D2X03-BJD4 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors
S6D04H0A01-B0C1 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um
S6D05A1X31-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors
S6D05A3X04-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv
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