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參數(shù)資料
| 型號： | S6D0110 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD |
| 中文描述： | 132的RGB源 |
| 文件頁數(shù)： | 69/108頁 |
| 文件大?。?/td> | 595K |
| 代理商： | S6D0110 |
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S6D0110 132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
Preliminary
69
2. Write mode 2: AM = 1, LG2-0 = 000
This mode is used when the data is vertically written at high speed. It can also be used to initialize the GRAM,
develop the font pattern in the vertical direction, or draw borders. The write-data mask function (WM15–0) is also
enabled in these operations. After writing, the address counter (AC) automatically increments by 256, and
automatically jumps to the upper-right edge (I/D = 1) or upper-left edge (I/D = 0) following the I/D bit after it has
reached the lower edge of the GRAM.
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
0
0
1
0
1
0
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
0
WM15
WM0
DB15
DB0
1
0
0
1
1
*
*
*
*
*
*
*
*
*
*
*
Operation Examples:
1) I/D = “1”, AM = “1”, LG2-0 = “000”
2) WM15-0 = “07FF’H
3) AC = “0000”H
Write data mask:
Write data (1):
Write data (2):
“0000”H
“0100”H
“0200”H
Write data (1)
Write data (2)
GRAM
Write data (3)
0
1
1
1
1
1
0
0
0
1
0
0
0
0
0
1
Write data (3):
NOTE: 1. The bits in the GRAM, * ‘s, are not changed.
2. After writing to address “AF00”H, the AC jumps to “0001”H
Figure 28. Writing operation of write mode 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S6D0114 | 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD |
| S70WS512N00BFWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S6D0114 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD |
| S6D04D2X03-BJD4 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors |
| S6D04H0A01-B0C1 | 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um |
| S6D05A1X31-BJD1 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors |
| S6D05A3X04-BJD1 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv |
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