參數(shù)資料
型號(hào)： S6D0110
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD
中文描述： 132的RGB源
文件頁數(shù)： 48/108頁
文件大?。?/td> 595K
代理商： S6D0110
132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
S6D0110
Preliminary
48
Horizontal Ram Address Position (R16h)
Vertical Ram Address Position (R17h)
R/W
W
RS
1
DB15
HEA
7
VEA
7
DB14
HEA
6
VEA
6
DB13
HEA
5
VEA
5
DB12
HEA
4
VEA
4
DB11
HEA
3
VEA
3
DB10
HEA
2
VEA
2
DB9
HEA
1
VEA
1
DB8
HEA
0
VEA
0
DB7
HSA
7
VSA
7
DB6
HSA
6
VSA
6
DB5
HSA
5
VSA
5
DB4
HSA
4
VSA
4
DB3
HSA
3
VSA
3
DB2
HSA
2
VSA
2
DB1
HSA
1
VSA
1
DB0
HSA
0
VSA
0
W
1
HSA7-0/HEA7-0:
Specify the horizontal start/end positions of a window for access in memory. Data can be written
to the GRAM from the address specified by HEA 7-0 from the address specified by HSA7-0. Note that an address
must be set before RAM is written. Ensure 00h
≤
HSA7-0
≤
HEA7-0
≤
83h.
VSA7-0/VEA7-0:
Specify the vertical start/end positions of a window for access in memory. Data can be written to
the GRAM from the address specified by VEA7-0 from the address specified by VSA7-0. Note that an address must
be set before RAM is written. Ensure 00h
≤
VSA7-0
≤
VEA7-0
≤
AFh.
Window address
0000H
AF83H
HSA
HEA
V S A
V E A
GRAM address space
Window address setting range
“00”h ￡ HSA7-0
≤
HEA7-0
≤
“83”h
“00”h
≤
VSA7-0
≤
VEA7-0
≤
“AF”h
NOTE: 1. Ensure that the window address area is within the GRAM address space
2. In high-speed write mode, data are written to GRAM in four-words.
Thus, dummy write operations should be inserted depending on the window address
area. For details, see the High-Speed Burst RAM Write Function section
Figure 14. Window address setting range
相關(guān)PDF資料
PDF描述
S6D0114 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6D0114 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S6D04D2X03-BJD4 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors
S6D04H0A01-B0C1 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um
S6D05A1X31-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors
S6D05A3X04-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv
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