參數(shù)資料
型號(hào): S6D0110
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD
中文描述: 132的RGB源
文件頁數(shù): 49/108頁
文件大?。?/td> 595K
代理商: S6D0110
S6D0110 132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
Preliminary
49
RAM Write Data Mask (R20h)
R/W
W
RS
1
DB15
WM15
DB14
WB14
DB13
WM13
DB12
WM12
DB11
WM11
DB10
WM10
DB9
WM9
DB8
WM8
DB7
WM7
DB6
WM6
DB5
WM5
DB4
WM4
DB3
WM3
DB2
WM2
DB1
WM1
DB0
WM0
WM15–0:
In writing to the GRAM, these bits mask writing in a bit unit. When WM15 = 1, this bit masks the write data
of DB15 and does not write to the GRAM. Similarly, the WM14 to 0 bits mask the write data of DB14 to 0 in a bit unit.
For details, see the Graphics Operation Function section.
RAM Address Set (R21h)
R/W
W
RS
1
DB15
AD15
DB14
AD14
DB13
AD13
DB12
AD12
DB11
AD11
DB10
AD10
DB9
AD9
DB8
AD8
DB7
AD7
DB6
AD6
DB5
AD5
DB4
AD4
DB3
AD3
DB2
AD2
DB1
AD1
DB0
AD0
AD15–0:
Initially set GRAM addresses to the address counter (AC). Once the GRAM data is written, the AC is
automatically updated according to the AM and I/D bit settings. This allows consecutive accesses without resetting
address. Once the GRAM data is read, the AC is not automatically updated. GRAM address setting is not allowed in
the standby mode. Ensure that the address is set within the specified window address
AD15 to AD0
“0000H” to “ 0083” H
“0100H” to “ 0183” H
“0200H” to “ 0283” H
“0300H” to “ 0383” H
:
:
:
“AC00H” to “AC83” H
“AD00H” to “AD83” H
“AE00H” to “AE83” H
“AF00H” to “AF83” H
GRAM setting
Bitmap data for G1
Bitmap data for G2
Bitmap data for G3
Bitmap data for G4
:
:
:
Bitmap data for G173
Bitmap data for G174
Bitmap data for G175
Bitmap data for G176
相關(guān)PDF資料
PDF描述
S6D0114 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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