參數(shù)資料
型號: S6D0110
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD
中文描述: 132的RGB源
文件頁數(shù): 107/108頁
文件大?。?/td> 595K
代理商: S6D0110
S6D0110 132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
Preliminary
107
Table 44. Parallel Write Interface Characteristics (80 Mode, HWM = 0)
(VDD = 1.8V to 2.5V, T
A
= -30 to +85
o
C)
VDD3 = 1.8V to 2.5V
VDD3 = 2.6V to 3.3V
Characteristic
Symbol
Min.
Max.
Min.
Max.
Unit
Write
Read
t
CYCW80
t
CYCR80
600
800
-
250
500
Cycle time
Pulse rise / fall time
t
R
, t
F
-
25
25
Write
Read
Write
Read
t
WLW80
t
WLR80
t
WHW80
t
WHR80
90
350
300
400
-
40
250
70
200
Pulse width low
-
Pulse width high
RW, RS and CSB setup time
t
AS80
10
-
10
RW, RS and CSB hold time
t
AH80
5
-
2
Write data setup time
t
WDS80
60
-
60
Write data hold time
t
WDH80
15
-
2
Read data delay time
t
RDD80
-
200
-
200
Read data hold time
t
RDH80
5
5
ns
Table 45. Parallel Write Interface Characteristics (80 Mode, HWM = 1)
(VDD = 1.8V to 2.5V, T
A
= -30 to +85
o
C)
VDD3 = 1.8V to 2.5V
VDD3 = 2.6V to 3.3V
Characteristic
Symbol
Min.
Max.
Min.
Max.
Unit
Write
Read
t
CYCW80
t
CYCR80
200
800
-
100
500
Cycle time
Pulse rise / fall time
t
R
, t
F
-
25
25
Write
Read
Write
Read
t
WLW80
t
WLR80
t
WHW80
t
WHR80
90
350
90
400
-
40
250
40
200
Pulse width low
-
Pulse width high
RW, RS and CSB setup time
t
AS80
10
-
10
RW, RS and CSB hold time
t
AH80
5
-
2
Write data setup time
t
WDS80
60
-
60
Write data hold time
t
WDH80
15
-
2
Read data delay time
t
RDD80
200
200
Read data hold time
t
RDH80
5
5
ns
相關PDF資料
PDF描述
S6D0114 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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