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參數(shù)資料
| 型號： | S6D0110 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD |
| 中文描述： | 132的RGB源 |
| 文件頁數(shù)： | 60/108頁 |
| 文件大?。?/td> | 595K |
| 代理商： | S6D0110 |
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132 RGB SOURCE & 176 GATE DRIVER WITH INTERNAL RAM FOR 65K COLORS TFT-LCD
S6D0110
Preliminary
60
HIGH-SPEED BURST RAM WRITE FUNCTION
The S6D0110 has a high-speed burst RAM-write function that can be used to write data to RAM in one-fourth the
access time required for an equivalent standard RAM-write operation. This function is especially suitable for
applications that require the high-speed rewriting of the display data, for example, display of color animations, etc.
When the high-speed RAM-write mode (HWM) is selected, data for writing to RAM is once stored to the S6D0110
internal register. When data is selected four times per word, all data is written to the on-chip RAM. While this is
taking place, the next data can be written to an internal register so that high-speed and consecutive RAM writing can
be executed for animated displays, etc.
Microcomputer
Register 1
Register 2
Register 3
Register 4
16
64
“0000”H
“0001”H
“0002”H
“0003”H
GRAM
Address
counter
(AC)
16
a) High-speed burst RAM write operation flow
CS*
(input)
b) Example of the operation of high-speed consecutive writing to RAM
1 2 3 4 1 2 3 4 1 2 3 4
Index
(R22)
RAM
data
1
RAM
data
2
RAM
data
3
RAM
data
4
RAM
data
5
RAM
data
6
RAM
data
7
RAM
data
8
RAM
data
9
RAM
data
10
RAM
data
11
RAM
data
12
Index
RAM write
execution time
RAM write
execution time
RAM write
execution time*
RAM
data 1 to 4
RAM
data 5 to 8
RAM
data 9 to 12
E
(input)
DB15-0
(input/output)
RAM write data
(64 bits)
RAM address
(AC 15-0)
“0000”H
“0004”H
“0008”H
“000A”H
Figure 22. Example of the operation of high-speed consecutive writing to RAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S6D0114 | 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD |
| S70WS512N00BFWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S6D0114 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD |
| S6D04D2X03-BJD4 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors |
| S6D04H0A01-B0C1 | 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um |
| S6D05A1X31-BJD1 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors |
| S6D05A3X04-BJD1 | 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv |
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