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參數(shù)資料
| 型號(hào)： | S29PL256N65FAW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存 |
| 文件頁數(shù)： | 76/85頁 |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL256N65FAW002 |
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74
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
Table 12.2 Sector Protection Commands
Command Sequence
(Notes)
C
Bus Cycles (Notes
1
–
6
)
Third
Addr
Data Addr Data Addr Data Addr Data Addr Data
First
Second
Addr
Fourth
Fifth
Sixth
Seventh
Addr
Data
Data
Lock Register Command Set Definitions
Lock Register Command Set Entry (
25
)
Lock Register Bits Program (
26
)
Lock Register Bits Read
Lock Register Command Set Exit (
27
)
Password Protection Command Set Definitions
Password Protection
Command Set Entry (
25
)
Lock
Register
3
2
1
2
555
XX
00
XX
AA
A0
data
90
2AA
00
55
data
555
40
XX
00
Password
3
555
AA
2AA
55
555
60
Password Program
2
XX
A0
00/01
02/03
PWD0/
PWD1/
PWD2/
PWD3
PWD1
03
Password Read
Password Unlock
Password Protection
Command Set Exit (
27
)
Non-Volatile Sector Protection Command Set Definitions
Non-Volatile Sector Protection
Command Set Entry (
25
)
PPB Program
All PPB Erase (
22
)
PPB Status Read
Non-Volatile Sector Protection
Command Set Exit (
27
)
Global Non-Volatile Sector Protection Freeze Command Set Definitions
Global Volatile Sector Protection Freeze
Command Set Entry (
25
)
PPB Lock Bit Set
PPB Lock Bit Status Read
Global Volatile Sector Protection Freeze
Command Set Exit (
27
)
Volatile Sector Protection Command Set Definitions
Volatile Sector Protection
Command Set Entry (
25
)
DYB Set
DYB Clear
DYB Status Read
Volatile Sector Protection
Command Set Exit (
27
)
4
7
00
00
PWD0
25
01
00
02
00
PWD2
PWD0
03
01
PWD3
PWD1
02
PWD2
03
PWD3
00
29
2
XX
90
XX
00
PPB
3
555
AA
2AA
55
[BA]555
C0
2
2
1 [BA]SA RD(0)
XX
XX
A0
80
[BA]SA
00
00
30
2
XX
90
XX
00
PPB Lock
Bit
3
555
AA
2AA
55
555
50
2
1
XX
BA
A0
XX
00
RD(0)
2
XX
90
XX
00
DYB
3
555
AA
2AA
55
[BA]555
E0
2
2
1 [BA]SA RD(0)
XX
XX
A0
A0
[BA]SA
[BA]SA
00
01
2
XX
90
XX
00
17. Command sequence resets device for next command after write-
to-buffer operation.
18. Entry commands are needed to enter a specific mode to enable
instructions only available within that mode.
19. The Exit command must be issued to reset the device into read
mode. Otherwise the device hangs.
20. The following mode cannot be performed at the same time.
Autoselect/CFI/Unlock Bypass/Secured Silicon. Command
sequence resets device for next command after write-to-buffer
operation.
21. Command is valid when device is ready to read array data or
when device is in autoselect mode. Address equals 55h on all
future devices, but 555h for PL256N.
22. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
Legend:
X = Don’t care
RA = Read Address.
RD = Read Data.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse whichever
happens later.
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. PL127/129N = A22 – A15; PL256N = A23 –
A15
BA = Bank Address. PL256N = A23 – A21; PL127N = A22 – A20;
PL127N = A21 – A20.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
PWD3 – PWD0 = Password Data. PD3 – PD0 present four 16 bit
combinations that represent the 64-bit Password
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0, if
unprotected, DQ0 = 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL256N65FAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW03 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FFI000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL256N65FAW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FAWW03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL256N65FFI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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