參數(shù)資料
型號(hào)： S29PL256N65FAW002
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫(xiě)，頁(yè)模式閃存
文件頁(yè)數(shù)： 36/85頁(yè)
文件大?。?/td> 940K
代理商： S29PL256N65FAW002
34
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-
read mode. The system can determine the status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence.
See
Write Buffer Programming
and
Autoselect
for details.
To resume the sector erase operation, the system must write the Erase Resume command. The
bank address of the erase-suspended bank is required when writing this command. Further writes
of the Resume command are ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
The following is a C source code example of using the erase suspend function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase suspend command */
*((UINT16 *)bank_addr + 0x000) = 0x00B0; /* write suspend command */
The following is a C source code example of using the erase resume function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase resume command */
*((UINT16 *)bank_addr + 0x000) = 0x0030; /* write resume command */
/* The flash needs adequate time in the resume state */
7.4.6 Program Suspend/ Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming op-
eration or a
Write to Buffer
programming operation so that data can read from any non-
suspended sector. When the Program Suspend command is written during a programming pro-
cess, the device halts the programming operation within t
PSL
(program suspend latency) and
updates the status bits.
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. The Program Suspend command can also be issued during a programming
operation while an erase is suspended. In this case, data can be read from any addresses not in
Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area,
then user must use the proper command sequences to enter and exit this region.
Software Functions and Sample Code
Table 7.11 Erase Suspend
(LLD Function = lld_ EraseSuspendCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.12 Erase Resume
(LLD Function = lld_ EraseResumeCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
0030h
相關(guān)PDF資料
PDF描述
S29PL256N65FAW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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