參數(shù)資料
型號(hào)： S29PL256N65FAW002
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存
文件頁數(shù)： 28/85頁
文件大小： 940K
代理商： S29PL256N65FAW002
26
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
7.4
Program/Erase Operations
These devices are capable of single word or write buffer programming operations which are de-
scribed in the following sections. The write buffer programming is recommended over single word
programming as it has clear benefits from greater programming efficiency. See
Table 7.1 on
page 21
for the correct device settings required before initiation of a write command sequence.
Note the following details regarding the program/erase operations:
When the Embedded Program algorithm is complete, the device then returns to the read
mode.
The system can determine the status of the program operation by using DQ7 or DQ6. See
Write Operation Status
for information on these status bits.
A
0
cannot be programmed back to a
1
. Attempting to do so causes the device to set DQ5 =
1 (halting any further operation and requiring a reset command). A succeeding read shows
that the data is still
0
.
Only erase operations can convert a
0
to a
1
.
A hardware reset immediately terminates the program operation and the program command
sequence should be reinitiated once the device has returned to the read mode, to ensure data
integrity.
Any commands written to the device during the Embedded Program Algorithm are ignored
except the Program Suspend command.
Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program oper-
ation is in progress.
Programming is allowed in any sequence and across sector boundaries for single word pro-
gramming operation.
7.4.1 Single W ord Programming
In single word programming mode, four Flash command write cycles are used to program an in-
dividual Flash address. While this method is supported by all Spansion devices, in general it is not
recommended for devices that support Write Buffer Programming. See
Table 12.1
for the re-
quired bus cycles and
Figure 7.1
for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode
and addresses are no longer latched. The system can determine the status of the program oper-
ation by using DQ7 or DQ6. See
Write Operation Status
for information on these status bits.
Single word programming is supported for backward compatibility with existing Flash driver soft-
ware and use of write buffer programming is strongly recommended for general programming.
The effective word programming time using write buffer programming is approximately four times
faster than the single word programming time.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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