參數(shù)資料
型號(hào)： S29PL256N65FAW002
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫(xiě)，頁(yè)模式閃存
文件頁(yè)數(shù)： 37/85頁(yè)
文件大?。?/td> 940K
代理商： S29PL256N65FAW002
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
35
P r e l i m i n a r y
The system can also write the Autoselect command sequence when the device is in Program Sus-
pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes
are not stored in the memory array. When the device exits the Autoselect mode, the device re-
verts to Program Suspend mode, and is ready for another valid operation. See
Autoselect
for
more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See
Write Operation Status
for more information.
The system must write the Program Resume command (address bits are
don't cares
) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the de-
vice has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*((UINT16 *)base_addr + 0x000) = 0x00B0; /* write suspend command */
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*((UINT16 *)base_addr + 0x000) = 0x0030; /* write resume command */
7.4.7 Accelerated Program
Accelerated single word programming, write buffer programming, sector erase, and chip erase
operations are enabled through the ACC function. This method is faster than the standard chip
program and erase command sequences.
The accelerated chip program and erase functions must not be used more than 10
times per sector.
In addition, accelerated chip program and erase should be performed at room
temperature (25
°
C
±
10
°
C).
This function is primarily intended to allow faster manufacturing throughput at the factory. If the
system asserts V
HH
on this input, the device automatically enters the aforementioned Unlock By-
pass mode and uses the higher voltage on the input to reduce the time required for program and
erase operations. The system can then use the Write Buffer Load command sequence provided
by the Unlock Bypass mode. Note that if a
Write-to-Buffer-Abort Reset
is required while in Unlock
Software Functions and Sample Code
Table 7.13 Program Suspend
(LLD Function = lld_ ProgramSuspendCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.14 Program Resume
(LLD Function = lld_ ProgramResumeCmd)
Cycle
Operation
Word Address
Data
1
Write
Bank Address
0030h
相關(guān)PDF資料
PDF描述
S29PL256N65FAW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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