參數(shù)資料
型號(hào)： S29PL256N65FAW002
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁(yè)模式閃存
文件頁(yè)數(shù)： 30/85頁(yè)
文件大?。?/td> 940K
代理商： S29PL256N65FAW002
28
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
7.4.2 W rite Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one program-
ming operation. This results in a faster effective word programming time than the standard
word
programming algorithms. The Write Buffer Programming command sequence is initiated by first
writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming occurs. At this point, the system
writes the number of
word locations minus 1
that is loaded into the page buffer at the Sector Ad-
dress in which programming occurs. This tells the device how many write buffer addresses are
loaded with data and therefore when to expect the
Program Buffer to Flash
confirm command.
The number of locations to program cannot exceed the size of the write buffer or the operation
aborts. (Number loaded = the number of locations to program minus 1. For example, if the sys-
tem programs 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first
address/data pair to be programmed, and selects the
write-buffer-page
address. All subsequent
address/data pairs must fall within the elected-write-buffer-page.
The
write-buffer-page
is selected by using the addresses A
max
– A5.
The
write-buffer-page
addresses must be the same for all address/data pairs loaded into the write
buffer. (This means Write Buffer Programming cannot be performed across multiple
write-buffer-
page
. This also means that Write Buffer Programming cannot be performed across multiple sec-
tors. If the system attempts to load programming data outside of the selected
write-buffer-page
,
the operation
ABORTS
.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data
pairs into the write buffer.
Note that if a Write Buffer address location is loaded multiple times, the
address/data pair
counter
decrements for every data load operation. Also, the last data loaded at a location before the
Pro-
gram Buffer to Flash
confirm command is programmed into the device. The software takes care
of the ramifications of loading a write-buffer location more than once. The counter decrements
for each data load operation,
NOT
for each unique write-buffer-address location. Once the speci-
fied number of write buffer locations have been loaded, the system must then write the
Program
Buffer to Flash
command at the Sector Address. Any other address/data write combinations abort
the Write Buffer Programming operation. The device then
goes
busy. The Data Bar polling tech-
niques should be used while monitoring the last address location loaded into the write buffer. This
eliminates the need to store an address in memory because the system can load the last address
location, issue the program confirm command at the last loaded address location, and then data
bar poll at that same address.
The write-buffer
embedded
programming operation can be suspended using the standard sus-
pend/resume commands. Upon successful completion of the Write Buffer Programming operation,
the device returns to READ mode.
If the write buffer command sequence is entered incorrectly the device enters write buffer abort.
When an abort occurs the
write-to buffer-abort reset
command must be issued to return the de-
vice to read mode.
The Write Buffer Programming Sequence is
ABORTED
under any of the following conditions:
Load a value that is greater than the page buffer size during the
Number of Locations to Pro-
gram
step.
Write to an address in a sector different than the one specified during the
Write-Buffer-Load
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address
during the
write buffer data loading
stage of the operation.
Write data other than the
Confirm Command
after the specified number of
data load
cycles.
相關(guān)PDF資料
PDF描述
S29PL256N65FAW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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