參數(shù)資料
型號: S29PL256N65FAW002
廠商: Spansion Inc.
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 256/128/128字節(jié)(16/8/8 M中的x 16位),3.0伏的CMOS只同步讀/寫,頁模式閃存
文件頁數(shù): 33/85頁
文件大?。?/td> 940K
代理商: S29PL256N65FAW002
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
31
P r e l i m i n a r y
be accepted. Any command other than Sector Erase or Erase Suspend during the time-out period
resets that bank to the read mode. The system can monitor DQ3 to determine if the sector erase
timer has timed out (see
DQ3: Sector Erase Timeout State Indicator
). The time-out begins from
the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and ad-
dresses are no longer latched. Note that while the Embedded Erase operation is in progress, the
system can read data from the non-erasing banks. The system can determine the status of the
erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. See
Write Operation Status
for
information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once that
bank has returned to reading array data, to ensure data integrity.
Figure 7.3
illustrates the algorithm for the erase operation. See
AC Characteristics
for the Erase/
Program Operations parameters and timing diagrams.
The following is a C source code example of using the sector erase function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Sector Erase Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)base_addr + 0x555) = 0x0080; /* write setup command */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write additional unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write additional unlock cycle 2 */
*((UINT16 *)sector_address) = 0x0030; /* write sector erase command */
Software Functions and Sample Code
Table 7.9 Sector Erase
(LLD Function = lld_ SectorEraseCmd)
Cycle
Description
Operation
Word Address
Data
1
Unlock
Write
Base + 555h
00AAh
2
Unlock
Write
Base + 2AAh
0055h
3
Setup Command
Write
Base + 555h
0080h
4
Unlock
Write
Base + 555h
00AAh
5
Unlock
Write
Base + 2AAh
0055h
6
Sector Erase Command
Write
Sector Address
0030h
Unlimited additional sectors can be selected for erase; command( s) must be w ritten w ithin t
SEA
.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory