參數(shù)資料
型號: S29PL256N65FAW002
廠商: Spansion Inc.
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 256/128/128字節(jié)(16/8/8 M中的x 16位),3.0伏的CMOS只同步讀/寫,頁模式閃存
文件頁數(shù): 61/85頁
文件大?。?/td> 940K
代理商: S29PL256N65FAW002
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
59
P r e l i m i n a r y
11 Electrical Specifications
11.1
Absolute Maximum Ratings
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 125°C
Voltage with Respect to Ground:
All Inputs and I/Os except as noted below (
Note 1
). . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to V
IO
+ 0.5 V
V
CC
(
Note 1
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 4.0 V
V
IO
(
Note 1
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 4.0V
ACC (
Note 2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 10.5 V
Output Short Circuit Current (
Note 3
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1.
Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot V
to –2.0 V
for periods of up to 20 ns. See
Figure 11.1
. Maximum DC voltage on input or I/Os is V
+ 0.5 V. During voltage
transitions outputs may overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 11.2
.
2.
Minimum DC input voltage on pin WP#
ACC is –0.5 V. During voltage transitions, WP#
ACC may overshoot V
to 2.0 V
for periods of up to 20 ns. See
Figure 11.1
. Maximum DC voltage on pin WP#
ACC is + 9.5 V, which may overshoot to
10.5 V for periods up to 20 ns.
3.
No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than
one second.
4.
Stresses above those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 11.1 Maximum Negative Overshoot Waveform
Figure 11.2 Maximum Positive Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
相關(guān)PDF資料
PDF描述
S29PL256N65FAW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N65FAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N65FFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory