參數(shù)資料
型號(hào)： NZ48F4L0QTZ
廠商： Intel Corp.
英文描述： StrataFlash Wireless Memory
中文描述： 無線的StrataFlash存儲(chǔ)器
文件頁數(shù)： 78/106頁
文件大?。?/td> 1272K
代理商： NZ48F4L0QTZ
Intel StrataFlash Wireless Memory (L18)
April 2005
78
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Appendix A Write State Machine (WSM)
Figure 33
through
Figure 38
show the command state transitions (Next State Table) based on
incoming commands. Only one partition can be actively programming or erasing at a time. Each
partition stays in its last read state (Read Array, Read Device ID, CFI Query or Read Status
Register) until a new command changes it. The next WSM state does not depend on the partition’s
output state.
Figure 33.
Write State Machine—Next State Table (Sheet 1 of 6)
Read
Array
(2)
Word
Program
(3,4)
Buffered
Program
(BP)
Erase
Setup
(3,4)
Buffered
Enhanced
Factory Pgm
Setup
(3, 4)
BE Confirm,
P/E
Resume,
ULB,
Confirm
(8)
BP / Prg /
Erase
Suspend
Read
Status
Clear
Status
Register
(5)
Read
ID/Query
Lock, Unlock,
Lock-down,
CR setup
(4)
(FFH)
(10H/40H)
(E8H)
(20H)
(80H)
(D0H)
(B0H)
(70H)
(50H)
(90H, 98H)
(60H)
Ready
Program
Setup
BP Setup
Erase
Setup
BEFP Setup
Lock/CR
Setup
Ready
(Unlock
Block)
Setup
Busy
Setup
Busy
Word
Program
Suspend
Suspend
Word
Program
Busy
Setup
BP Load 1
BP Load 2
BP
Confirm
BP Busy
BP Busy
BP Suspend
BP
Suspend
BP Busy
Setup
Erase Busy
Busy
Erase
Suspend
Suspend
Erase
Suspend
Word
Program
Setup in
Erase
Suspend
BP Setup in
Erase
Suspend
Erase Busy
Lock/CR
Setup in
Erase
Suspend
BP Suspend
Erase
BP Busy
Erase Busy
Erase Suspend
Erase Suspend
Ready (Error)
Erase Busy
BP Suspend
Ready (Error)
Word
Program
Program Busy
Word Program Suspend
Word Program Busy
OTP
Ready (Lock Error)
Ready
Ready
Ready (Lock Error)
OTP Busy
Current Chip
State
(7)
Command Input to Chip and resulting
Chip
Next State
BP
BP Busy
Lock/CR Setup
BP Load 2
Ready (Error)
Ready (Error)
Word Program Busy
BP Confirm if Data load into Program Buffer is complete; Else BP Load 2
Word Program Suspend
BP Load 1
相關(guān)PDF資料
PDF描述
NZD560A NPN Low Saturation Transistor
NZF220DFT1G EMI Filter with ESD Protection
NZF220TT1 EMI Filter with ESD Protection(帶ESD保護(hù)功能的EMI濾波器)
NZL5V1AXV3T1 Zener Voltage Regulators (SC-89 Dual Common Anode Zeners for ESD Protection)
NZL5V6AXV3T1 Zener Voltage Regulators(齊納穩(wěn)壓管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZ600N18K 制造商:n/a 功能描述:Power Module
NZ9F10VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F10VT5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F11VST5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
NZ9F11VT5G 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*