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參數(shù)資料
| 型號： | NAND04GA3C2AN6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory |
| 中文描述： | 4Gbit的，2112字節(jié)的頁，3V供電，多級NAND閃存 |
| 文件頁數(shù)： | 7/51頁 |
| 文件大?。?/td> | 374K |
| 代理商： | NAND04GA3C2AN6F |
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NAND04GA3C2A, NAND04GW3C2A
1 Summary description
7/51
1
Summary description
The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the
NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered
in 1.8V and 3V V
DDQ
I/O power supplies. The core voltage is 3V V
DD.
The size of a Page is
2112 Bytes (2048 + 64 spare).
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8
Input/Output bus. This interface reduces the pin count and makes it possible to migrate to
other densities without changing the footprint.
Each block can be programmed and erased over 10,000 cycles. The devices also have
hardware security features; a Write Protect pin is available to give hardware protection
against Program and Erase operations.
The devices feature an open-drain Ready/Busy output that can be used to identify if the
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output
allows the Ready/Busy pins from several memories to be connected to a single pull-up
resistor.
Each device has a Cache Read feature which improves the read throughput for large files.
During Cache Reading, the device loads the data in a Cache Register while the previous
data is transferred to the I/O Buffers to be read.
All devices have the Chip Enable Don’t Care feature, which allows code to be directly
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not
stop the read operation
There is the option of a Unique Identifier (serial number), which allows each device to be
uniquely identified. It is subject to an NDA (Non Disclosure Agreement) and is therefore not
described in the datasheet. For more details of this option contact your nearest ST Sales
office.
The NAND04GA3C2A and NAND04GW3C2A are available in a TSOP48 (12 x 20mm)
package. In order to meet environmental requirements, ST offers the devices in ECOPACK
packages. ECOPACK packages are Lead-free. The category of second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com.
For information on how to order these options refer to
Table 22: Ordering Information
Scheme
. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See
Table 2: Product Description
, for all the devices available in the family.
Table 2.
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
V
DD
Operating
Voltage
V
DDQ
Timings
Package
Random
Access
(max)
Sequential
Access
(min)
Page
Program
(typ)
Block
Erase
(typ)
NAND04Gx3C2A
NAND04GW3C2A
4Gbits
x8
2048+
64
Bytes
256K+
8K
Bytes
128
Pages x
2048
Blocks
2.7 to 3.6V
2.7V to
3.6V
60μs
60ns
800μs
1.5ms
TSOP48
NAND04GA3C2A
2.7 to 3.6V
1.7V to
1.95V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND04GW3C2AN6E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory |
| NAND128R3A2AZA1 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128W3A0AV6 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND256R3A0AZB6 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128W4A0CZA6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND04GR3B2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND04GR3B2DN6E | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| NAND04GR3B2DZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND04GR3B2EN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND04GR3B2EN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
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