參數(shù)資料
型號(hào)： NAND04GA3C2AN6F
廠商： 意法半導(dǎo)體
英文描述： 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
中文描述： 4Gbit的，2112字節(jié)的頁(yè)，3V供電，多級(jí)NAND閃存
文件頁(yè)數(shù)： 13/51頁(yè)
文件大?。?/td> 374K
代理商： NAND04GA3C2AN6F
NAND04GA3C2A, NAND04GW3C2A
3 Signal Descriptions
13/51
3
Signal Descriptions
See
Figure 1: Logic Block Diagram
, and
Table 3: Signal Names
, for a brief overview of the
signals connected to this device.
3.1
Inputs/outputs (I/O0-I/O7)
Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read
operation or input a command or data during a Write operation. The inputs are latched on
the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or
the outputs are disabled.
3.2
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the Address inputs in the Command
Interface. When AL is high, the inputs are latched on the rising edge of Write Enable.
3.3
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the Command inputs in the Command
Interface. When CL is high, the inputs are latched on the rising edge of Write Enable.
3.4
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and
sense amplifiers. When Chip Enable is low, V
IL
, the device is selected. If Chip Enable goes
high, v
IH
, while the device is busy, the device remains selected and does not go into standby
mode.
3.5
Read Enable (R)
The Read Enable pin, R, controls the sequential data output during Read operations. Data
is valid t
RLQV
after the falling edge of R. The falling edge of R also increments the internal
column address counter by one.
3.6
Write Enable (W)
The Write Enable input, W, controls writing to the Command Interface, Input Address and
Data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10μs (min) is required before the
Command Interface is ready to accept a command. It is recommended to keep Write Enable
high during the recovery time.
相關(guān)PDF資料
PDF描述
NAND04GW3C2AN6E 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND128R3A2AZA1 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND128W3A0AV6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A0AZB6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND128W4A0CZA6E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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