參數(shù)資料
型號： MX29F8100
廠商： Macronix International Co., Ltd.
英文描述： 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
中文描述： 800萬位[100萬x 8/512K × 16] CMOS單電壓閃存
文件頁數(shù)： 6/37頁
文件大?。?/td> 225K
代理商： MX29F8100
6
P/N: PM0262
REV. 2.0, JAN. 22, 1999
MX29F8100
Command
Sequence
Read/
Reset
Silicon
ID Read
Page/Byte
Program
Chip
Erase
Sector
Erase
Erase
Suspend
Erase
Resume Status Reg. Status Reg.
Read
Clear
Bus Write
Cycles Req'd
4
4
4
6
6
3
3
4
3
First Bus
Write Cycle
Addr
Data
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
5555H
AAH
Second Bus
Write Cycle
Addr
Data
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
2AAAH
55H
Third Bus
Write Cycle
Addr
Data
5555H
F0H
5555H
90H
5555H
A0H
5555H
80H
5555H
80H
5555H
B0H
5555H
D0H
5555H
70H
5555H
50H
Fourth Bus
Read/Write Cycle Data
Addr
RA
RD
00H/01H
C2H/88H
PA
PD
5555H
AAH
5555H
AAH
X
SRD
Fifth Bus
Write Cycle
Addr
Data
2AAAH
55H
2AAAH
55H
Sixth Bus
Write Cycle
Addr
Data
5555H
10H
SA
30H
WRITE OPERATIONS
Commands are written to the COMMAND INTERFACE
REGISTER (CIR) using standard microprocessor write
timings. The CIR serves as the interface between the
microprocessor and the internal chip operation. The CIR
can decipher Read Array, Read Silicon ID, Erase and
Program command. In the event of a read command, the
CIR simply points the read path at either the array or the
silicon ID, depending on the specific read command
given. For a program or erase cycle, the CIR informs the
write state machine that a program or erase has been
requested. During a program cycle, the write state
machine will control the program sequences and the CIR
will only respond to status reads. During a sector/chip
erase cycle, the CIR will respond to status reads and
erase suspend. After the write state machine has
completed its task, it will allow the CIR to respond to its full
command set. The CIR stays at read status register
mode until the microprocessor issues another valid
command sequence.
Device operations are selected by writing commands into
the CIR. Table 3 below defines 8 Mbit flash family
command.
TABLE 3. COMMAND DEFINITIONS
INDEX
相關(guān)PDF資料
PDF描述
MX29L1611G Replaced by OPA111 :
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29F8100MC-10C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
MX29F8100MC-10C4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
MX29F8100MC-12C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
MX29F8100MC-12C4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
MX29F8100MC-15C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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