參數(shù)資料
型號: MX29F8100
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
中文描述: 800萬位[100萬x 8/512K × 16] CMOS單電壓閃存
文件頁數(shù): 21/37頁
文件大?。?/td> 225K
代理商: MX29F8100
21
P/N: PM0262
REV. 2.0, JAN. 22, 1999
MX29F8100
SYMBOL
PARAMETER
NOTES
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
IIL
Input Load
Current
1
±
10
uA
VCC = VCC Max
VIN = VCC or GND
ILO
Output Leakage
Current
1
±
10
uA
VCC = VCC Max
VIN = VCC or GND
ISB1
VCC Standby
Current(CMOS)
1
50
100
uA
VCC = VCC Max
CE1, CE2, PWD = VCC
±
0.2V
ISB2
VCC Standby
Current(TTL)
2
4
mA
VCC = VCC Max
CE1, CE2, PWD = VIH
IDP
VCC Deep
Power-Down
Current
1
1
20
uA
PWD = GND
±
0.2V
ICC1
VCC Read
Current
1
50
60
mA
VCC = VCC Max
CMOS: CE1, CE2 = GND
±
0.2V
BYTE = GND
±
0.2V or VCC
±
0.2V
Inputs = GND
±
0.2V or VCC
±
0.2V
TTL : CE1, CE2 = VIL,
BYTE = VIL or VIH
Inputs = VIL or VIH,
f = 10MHz, IOUT = 0 mA
ICC2
VCC Read
Current
1
30
35
mA
VCC = VCC Max,
CMOS: CE1, CE2 = GND
±
0.2V
BYTE = VCC
±
0.2V or GND
±
0.2V
Inputs = GND
±
0.2V or VCC
±
0.2V
TTL: CE1, CE2 = VIL,
BYTE = VIH or VIL
Inputs = VIL or VIH,
f = 5MHz, IOUT = 0mA
ICC3
VCC Erase
Suspend Current
1,2
5
10
mA
CE1, CE2 = VIH
BLock Erase Suspended
ICC4
VCC Program
Current
1
30
50
mA
Program in Progress
ICC5
VCC Erase Current
1
30
50
mA
Erase in Progress
VIL
Input Low Voltage
3
-0.3
0.8
V
VIH
Input High Voltage
4
2.4
VCC+0.3
V
VOL
Output Low Voltage
0.45
V
IOL = 2.1mA
VOH
Output High Voltage
2.4
V
IOH = -400uA
DC CHARACTERISTICS
= 0
°
C to 70
°
C, VCC = 5V
±
10%
INDEX
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