參數(shù)資料
型號: MX29F8100
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
中文描述: 800萬位[100萬x 8/512K × 16] CMOS單電壓閃存
文件頁數(shù): 35/37頁
文件大?。?/td> 225K
代理商: MX29F8100
35
P/N: PM0262
REV. 2.0, JAN. 22, 1999
MX29F8100
44-PIN PLASTIC SOP
ITEM
MILLIMETERS
INCHES
A
28.70 max.
1.130 max.
B
1.10 [REF]
.043 [REF]
C
1.27 [TP]
.050 [TP]
D
.40
±
.10 [Typ.]
.016
±
.004 [Typ.]
E
.010 min.
.004 min.
F
3.00 max.
.118 max.
G
2.80
±
.13
.110
±
.005
H
16.04
±
.30
.631
±
.012
I
12.60
.496
J
1.72
.068
K
.15
±
.10 [Typ.]
.006
±
.004 [Typ.]
L
.80
±
.20
.031
±
.008
NOTE:
Each lead centerline is located within
.25 mm[.01 inch] of its true position
[TP] at maximum material condition.
48-PIN PLASTIC TSOP
ITEM
MILLIMETERS
INCHES
A
20.0
±
.20
.787
±
.008
B
18.40
±
.10
.724
±
.004
C
12.20 max.
.480 max.
D
0.15 [Typ.]
.006 [Typ.]
E
.80 [Typ.]
.031 [Typ.]
F
.20
±
.10
.008
±
.004
G
.30
±
.10
.012
±
.004
H
.50 [Typ.]
.020 [Typ.]
I
.45 max.
.018 max.
J
0 ~ .20
0 ~ .008
K
1.00
±
.10
.039
±
.004
L
1.27 max.
.050 max.
M
.50
.020
N
0 ~ 5°
.500
NOTE:
Each lead centerline is located within
.25 mm[.01 inch] of its true position
[TP] at maximum material condition.
1
22
23
44
A
D
C
B
E
G
F
H
I
J
K
L
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INDEX
相關(guān)PDF資料
PDF描述
MX29L1611G Replaced by OPA111 :
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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