參數(shù)資料
型號: MX29F8100
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
中文描述: 800萬位[100萬x 8/512K × 16] CMOS單電壓閃存
文件頁數(shù): 20/37頁
文件大小: 225K
代理商: MX29F8100
20
P/N: PM0262
REV. 2.0, JAN. 22, 1999
MX29F8100
RATING
Ambient Operating Temperature
VALUE
0°C to 70°C
Storage Temperature
-65°C to 125°C
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to 7.0V
VCC to Ground Potential
-0.5V to 7.0V
A9
-0.5V to 13.5V
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL SPECIFICATIONS
NOTICE:
Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is stress rating only and functional operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended period may
affect reliability.
NOTICE:
Specifications contained within the following tables are subject
to change.
CAPACITANCE
TA = 25°C, f = 1.0 MHz
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
CIN
Input Capacitance
14
pF
VIN = 0V
COUT
Output Capacitance
16
pF
VOUT = 0V
SWITCHING TEST CIRCUITS
SWITCHING TEST WAVEFORMS
2.0V
0.8V
2.4V
0.45V
TEST POINTS
INPUT
2.0V
0.8V
OUTPUT
AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0".
Input pulse rise and fall times are < 10ns.
DEVICE
UNDER
TEST
DIODES = IN3064
OR EQUIVALENT
CL = 100 pF Including jig capacitance
6.2K ohm
1.8K ohm
+5V
CL
INDEX
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