參數(shù)資料
型號： MX29L1611G
廠商： Macronix International Co., Ltd.
英文描述： Replaced by OPA111 :
中文描述： 1,600位[2米x 8/1M × 16] CMOS單電壓閃存EEPROM的
文件頁數(shù)： 1/34頁
文件大?。?/td> 380K
代理商： MX29L1611G
1
P/N:PM0604
REV. 0.8, JAN. 24, 2002
MX29L1611G / MX29L1611*
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE FLASH EEPROM
ADVANCED INFORMATION
Status Register feature for detection of program or
erase cycle completion
Low VCC write inhibit is equal to or less than 1.8V
Software data protection
Page program operation
- Internal address and data latches for 64 words per
page
- Page programming time: 5ms typical
Low power dissipation
- 50mA active current
- 20uA standby current
Two independently Protected sectors
Package type
- 42 pin plastic DIP
* For page mode read only
GENERAL DESCRIPTION
The MX29L1611G is a 16-mega bit Flash memory
organized as either 1M wordx16 or 2M bytex8. The
MX29L1611G includes 32 sectors of 64KB(65,536 Bytes
or 32,768 words). MXIC's Flash memories offer the most
cost-effective and reliable read/write non-volatile random
access memory. The MX29L1611G is packaged in 42
pin PDIP.
The standard MX29L1611G offers access times as fast
as 100ns,allowing operation of high-speed
microprocessors without wait. To eliminate bus contention,
the MX29L1611G has separate chip enable CE and,
output enable (OE).
MXIC's Flash memories augment EPROM functionality
with electrical erasure and programming. The
MX29L1611G uses a command register to manage this
functionality.
MX29L1611G does require high input voltages for
programming. Commands require 11V nput to determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 100 cycles. The MXIC's cell is designed to
optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L1611G uses a 11V Vpp supply to perform the
Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
FEATURES
3.3V
±
10% for write and read operation
11V Vpp erase/programming operation
Endurance: 100 cycles
Fast random access time: 90ns/100ns/120ns
Fast page access time: 30ns (Only for 29L1611PC-90/
10/12)
Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip
- Automatically programs and verifies data at specified
addresses
相關(guān)PDF資料
PDF描述
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-12 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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