參數(shù)資料
型號： MX29L1611G
廠商： Macronix International Co., Ltd.
英文描述： Replaced by OPA111 :
中文描述： 1,600位[2米x 8/1M × 16] CMOS單電壓閃存EEPROM的
文件頁數(shù)： 27/34頁
文件大小： 380K
代理商： MX29L1611G
27
P/N:PM0604
REV. 0.8, JAN. 24, 2002
MX29L1611G / MX29L1611*
Figure 9. SECTOR PROTECTION ALGORITHM
START,
PLSCNT=0
Write Data 60H Address 5555H
NO
Write Data 55H Address 2AAAH
BYTE/VPP=VHH
Increment PLSCNT,
To Protect Sector Again
YES
YES
NO
SR7 = 1
Write Data AAH Address 5555H
Read Status Register
To
Verify Protect
Status
Data
= C2H
Write Data AAH Address 5555H
Write Data 55H Address 2AAAH
Write Data 20H, Sector Address*
BYTE/VPP=VIH/VIL
Verify Protect Status Flow
(Figure 11)
Device Failed
YES
NO
Protect Sector
Operation Terminated
Sector Protected,Operation
Done, Device Stays at
Verify Sector Protect Mode
Device Stays at
Read S.R. Mode
YES
PLSCNT
= 25
NO
NOTE :
*Only the Top or the Bottom Sector Address is vaild in this feature.
i.e. Sector Address = (A19,A18,A17,A16,A15) = 00000B or 11111B
相關(guān)PDF資料
PDF描述
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-12 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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