參數(shù)資料
型號(hào): MX29L1611G
廠商: Macronix International Co., Ltd.
英文描述: Replaced by OPA111 :
中文描述: 1,600位[2米x 8/1M × 16] CMOS單電壓閃存EEPROM的
文件頁(yè)數(shù): 11/34頁(yè)
文件大?。?/td> 380K
代理商: MX29L1611G
11
P/N:PM0604
REV. 0.8, JAN. 24, 2002
MX29L1611G / MX29L1611*
CLEAR STATUS REGISTER
The Eraes fail status bit (Q5) and Program fail status bit
(Q4) are set by the write state machine, and can only be
reset by the system software. These bits can indicate
various failure conditions(see Table 6). By allowing the
system software to control the resetting of these bits,
several operations may be performed (such as
cumulatively programming several pages or erasing
multiple blocks in squence). The status register may
then be read to determine if an error occurred during that
programming or erasure series. This adds flexibility to
the way the device may be programmed or erased.
Additionally, once the program(erase) fail bit happens,
the program (erase) operation can not be performed
further. The program(erase) fail bit must be reset by
system software before further page program or sector
(chip) erase are attempted. To clear the status register,
the Clear Status Register command is written to the CIR.
Then, any other command may be issued to the CIR.
Note again that before a read cycle can be initiated, a
Read command must be written to the CIR to specify
whether the read data is to come from the Array, Status
Register or Silicon ID.
相關(guān)PDF資料
PDF描述
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-12 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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