參數(shù)資料
型號: MX29L1611G
廠商: Macronix International Co., Ltd.
英文描述: Replaced by OPA111 :
中文描述: 1,600位[2米x 8/1M × 16] CMOS單電壓閃存EEPROM的
文件頁數(shù): 14/34頁
文件大小: 380K
代理商: MX29L1611G
14
P/N:PM0604
REV. 0.8, JAN. 24, 2002
MX29L1611G / MX29L1611*
LOW VCC WRITE INHIBIT
To avoid initiation of a write cycle during VCC power-up
and power-down, a write cycle is locked out for VCC less
than VLKO(typically 1.8V). If VCC < VLKO, the command
register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to
the read mode. Subsequent writes will be ignored until
the VCC level is greater than VLKO. It is the user's
responsibility to ensure that the control pins are logically
correct to prevent unintentional write when VCC is above
VLKO.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 10ns (typical) on CE will not
initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL,CE =
VIH. To initiate a write cycle, CE must be a logical zero
while OE is a logical one, and VPP=11V should be
applied.
相關PDF資料
PDF描述
MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611MC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-12 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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