參數(shù)資料
型號(hào)： MT18HVF6472PY-53EXX
元件分類： DRAM
英文描述： 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
封裝： LEAD FREE, DIMM-240
文件頁(yè)數(shù)： 19/47頁(yè)
文件大?。?/td> 1012K
代理商： MT18HVF6472PY-53EXX
PDF: 09005aef81c753e1/ Source: 09005aef81c753af
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G_2.fm - Rev. A 8/05 EN
26
2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB: (x72, SR) 240-Pin DDR2 VLP RDIMM
Input Electrical Characteristics and Operating Conditions
IDD Specifications and Conditions
IDD specifications are tested after the device is properly initialized. 0°C ≤ TCASE ≤ +85°C.
VDD = VDDQ = VDDL = +1.8V ±0.1V; VREF=VDDQ/2.
Input slew rate is specified by AC Parametric Test Conditions. IDD parameters are speci-
fied with ODT disabled. Data bus consists of DQ, DM, DQS, DQS#. IDD values must be
met with all combinations of EMR bits 10 and 11.
Definitions for IDD Conditions:
LOW is defined as VIN ≤ VIL (AC) (MAX)
HIGH is defined as VIN ≥ VIH (AC) (MIN)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as inputs changing between HIGH and LOW every other clock
cycle (once per two clocks) for address and control signals
Switching is defined as inputs changing between HIGH and LOW every other data
transfer (once per clock) for DQ signals not including masks or strobes
Table 10:
Input DC Logic Levels
All voltages referenced to VSS
Parameter
Symbol
MIN
MAX
Units
Notes
Input High (Logic 1) Voltage
VIH(DC)VREF + 125
VDDQ + 300
mV
Input Low (Logic 0) Voltage
VIL(DC)
-300
VREF - 125
mV
Table 11:
Input AC Logic Levels
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Units
Input HIGH (logic 1) voltage (-40E/-53E)
VIH(AC)VREF + 250
-
mV
Input HIGH (logic 1) voltage (-667)
VIH(AC)VREF + 200
-
mV
Input LOW (logic 0) voltage
VIL(AC)–
VREF - 250
mV
Table 12:
General IDD Parameters
IDD Parameter
-667
-53E
-40E
Units
CL (IDD)
54
3
tCK
tRCD (IDD)
15
ns
tRC (IDD)
55
ns
tRRD (IDD)
7.5
ns
tCK (IDD)
33.75
5
ns
tRAS MIN (IDD)
45
40
ns
tRAS MAX (IDD)
70,000
ns
tRP (IDD)
15
ns
tRFC (IDD)
512MB
75
ns
1GB
105
ns
2GB
127.5
ns
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