- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299522 > MT18HVF6472PY-53EXX 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 PDF資料下載
參數(shù)資料
| 型號： | MT18HVF6472PY-53EXX |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | LEAD FREE, DIMM-240 |
| 文件頁數(shù)： | 16/47頁 |
| 文件大小： | 1012K |
| 代理商： | MT18HVF6472PY-53EXX |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁
PDF: 09005aef81c753e1/ Source: 09005aef81c753af
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G_2.fm - Rev. A 8/05 EN
23
2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB: (x72, SR) 240-Pin DDR2 VLP RDIMM
Extended Mode Register 3 (EMR3)
The Extended Mode Register 3 (EMR3) controls functions beyond those controlled by
the mode register. Currently all bits in EMR3 are reserved as shown in Figure 11,
"Extended Mode Register 3 (EMR3) Definition," on page 23. The EMR3 is programmed
via the LOAD MODE command and will retain the stored information until it is pro-
grammed again or the device loses power. Reprogramming the extended mode register
will not alter the contents of the memory array, provided it is performed correctly.
The extended mode register must be loaded when all banks are idle and no bursts are in
progress, and the controller must wait the specified time tMRD before initiating any sub-
sequent operation. Violating either of these requirements could result in unspecified
operation.
Figure 11:
Extended Mode Register 3 (EMR3) Definition
A9
A7 A6 A5 A4 A3
A8
A2
A1 A0
Extended Mode
Register (Ex)
Address Bus
97
6
5
4
3
82
1
0
A10
A12 A11
BA0
BA1
10
11
12
13
* E12 (A12)–E0 (A0) are reserved for future use and must all be programmed to '0.'
14
EMR3 0* 0*
0*
0* 0* 0* 0* 0* 0* 0* 0*
0* 0*
A9
A7 A6 A5 A4 A3
A8
A2
A1 A0
Extended Mode
Register (Ex)
Address Bus
97
6
5
4
3
82
1
0
A10
A12 A11
BA0
BA1
10
11
12
13
0*
14
15
A13
EMR3
0*
0* 0* 0* 0* 0* 0* 0* 0*
0* 0*
512MB Address Bus
1GB Address Bus
A9
A7 A6 A5 A4 A3
A8
A2
A1 A0
Extended Mode
Register (Ex)
Address Bus
97
6
5
4
3
82
1
0
A10
A12 A11
BA0
BA1
10
11
12
13
0*
14
15
A13
0
1
0
1
Mode Register Set
Mode Register Set (MRS)
Extended Mode Register (EMR)
Extended Mode Register (EMR2)
Extended Mode Register (EMR3)
E15
0
0
1
E14
EMR3
0*
0* 0* 0* 0* 0* 0* 0* 0*
0* 0*
* E16 and E13 (A13) - E0 (A0) are reserved for future
use and must all be programmed to '0'.
BA2
16
0*
* E13 (A13)–E0 (A0) are reserved for future use and must all be programmed to '0.'
2GB Address Bus
相關PDF資料 |
PDF描述 |
|---|---|
| MT28C128532W30DFW-F706P85BBWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| MT28C128564W30DBW-F706P85KBTWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| MT28C128532W30EFW-F705-P856KBBWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| MT28C128532W18EFW-F605-P706BTWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| MT28C128532W18EFW-F605-P706KBTWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT18HVF6472Y-53EB1 | 功能描述:MODULE DDR2 512MB 240-DIMM VLP RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18HVS25672CHY-53EE1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR2 SDRAM MODULE PBF VLPSOCDIMM 1.8V NON BUF - Trays |
| MT18HVS25672CHY-667E1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR2 SDRAM MODULE PBF VLPSOCDIMM 1.8V NON BUF - Trays |
| MT18HVS25672PKY-667E1 | 制造商:Micron Technology Inc 功能描述: |
| MT18HVS25672PKY-667G1 | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。