參數(shù)資料
型號： MCIMX514AJM6C
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： SPECIALTY MICROPROCESSOR CIRCUIT, PBGA529
封裝： 19 X 19 MM, 0.8 MM PITCH, ROHS COMPLIANT, BGA-529
文件頁數(shù)： 109/172頁
文件大?。?/td> 2218K
代理商： MCIMX514AJM6C
Electrical Characteristics
i.MX51A Automotive and Infotainment Applications Processors, Rev. 4
Freescale Semiconductor
41
AC electrical characteristics in DDR2 mode for Fast mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in Table 41.
AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65-1.95V, ipp_hve=0 are
placed in Table 42.
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 41. AC Electrical Characteristics of DDR2_clk IO Pads for Fast mode and
for ovdd=1.65 – 1.95 V
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times1
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3
V, IO 1.95 V, -40 °C and s0-s5=000000.
tpr
15pF
35pF
0.58/0.57
1.29/1.28
0.45/0.44
0.97/0.93
0.45/0.45
0.82/0.85
ns
Output Pad Propagation Delay, 50%-50%1
tpo
15pF
35pF
1.05/1.03
1.54/1.56
1.40/1.31
1.75/1.69
2.12/1.96
2.43/2.31
ns
Output Pad Slew Rate1
tps
15pF
35pF
2.02/2.05
0.91/0.91
2.40/2.45
1.11/1.16
2.20/2.20
1.21/1.16
V/ns
Output Pad di/dt1
di/dt
—
390
201
99
mA/ns
Input Pad Transition Times2
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8
V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.3/0.36
0.5/0.52
0.82/0.94
ns
Maximum Input Transition Times3
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
trm
—
5
ns
Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for
ovdd=1.65 – 1.95 V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times1
tpr
15pF
35pF
0.74/0.76
1.40/1.39
0.69/0.72
1.18/1.20
1.04/1.01
1.48/1.47
ns
Output Pad Propagation Delay, 50%-50%1
tpo
15pF
35pF
1.56/1.61
2.12/2.22
2.02/2.08
2.49/2.61
3.45/3.33
4.05/3.98
ns
Output Pad Slew Rate1
tps
15pF
35pF
1.58/1.54
0.84/0.84
1.57/1.50
0.92/0.90
0.95/0.98
0.67/0.67
V/ns
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