參數(shù)資料
型號: MCIMX514AJM6C
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PBGA529
封裝: 19 X 19 MM, 0.8 MM PITCH, ROHS COMPLIANT, BGA-529
文件頁數(shù): 105/172頁
文件大小: 2218K
代理商: MCIMX514AJM6C
i.MX51A Automotive and Infotainment Applications Processors, Rev. 4
38
Freescale Semiconductor
Electrical Characteristics
AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65 – 1.95 V, ipp_hve = 0 are
placed in Table 38:
Output Pad di/dt1
di/dt
390
201
99
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.45/0.93
0.6/0.58
0.9/0.88
ns
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.55/0.55
0.71/0.7
1.03/0.98
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.38/0.38
0.58/0.61
1.014/1.07
ns
Maximum Input Transition Times3
trm
5
ns
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 38. AC Electrical Characteristics of DDR2 IO Pads for Slow Mode and
for ovdd=1.65 – 1.95 V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times1
tpr
15pF
35pF
0.75/0.76
1.39/1.40
0.70/0.74
1.18/1.21
1.06/1.00
1.49/1.47
ns
Output Pad Propagation Delay, 50%-50%1
tpo
15pF
35pF
1.50/1.55
2.05/2.16
1.90/1.95
2.36/2.48
3.23/3.10
3.82/3.75
ns
Output Pad Slew Rate1
tps
15pF
35pF
1.56/1.54
0.84/0.84
1.54/1.46
0.92/0.89
0.93/0.99
0.66/0.67
V/ns
Output Pad di/dt1
di/dt
82
40
19
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.45/0.93
0.6/0.58
0.9/0.88
ns
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.55/0.55
0.71/0.7
1.03/0.98
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.38/0.38
0.58/0.61
1.014/1.07
ns
Maximum Input Transition Times3
trm
5
ns
Table 37. AC Electrical Characteristics of DDR2 IO Pads for Fast mode and
for ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
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