參數(shù)資料
型號： MCIMX514AJM6C
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： SPECIALTY MICROPROCESSOR CIRCUIT, PBGA529
封裝： 19 X 19 MM, 0.8 MM PITCH, ROHS COMPLIANT, BGA-529
文件頁數(shù)： 106/172頁
文件大?。?/td> 2218K
代理商： MCIMX514AJM6C
Electrical Characteristics
i.MX51A Automotive and Infotainment Applications Processors, Rev. 4
Freescale Semiconductor
39
AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65 – 1.95 V, ipp_hve=0 are placed
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5 = 000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 39. AC Electrical Characteristics of DDR mobile IO Pads for Fast Mode and
ovdd=1.65 – 1.95 V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times (High Drive)1
tpr
15pF
35pF
1.35/1.31
2.99/2.94
1.02/1.03
2.28/2.29
0.89/0.89
1.85/1.94
ns
Output Pad Transition Times (Medium Drive)1
tpr
15pF
35pF
2.00/1.99
4.55/4.44
1.56/1.53
3.38/3.45
1.28/1.32
2.79/2.85
ns
Output Pad Transition Times (Low Drive)1
tpr
15pF
35pF
4.08/3.92
8.93/8.95
3.11/3.06
6.84/6.81
2.50/2.61
5.56/5.76
ns
Output Pad Propagation Delay (High Drive)1
tpo
15pF
35pF
1.54/1.52
2.69/2.75
1.73/1.62
2.59/2.55
2.36/2.09
3.04/2.86
ns
Output Pad Propagation Delay (Medium Drive)1
tpo
15pF
35pF
2.00/2.02
3.75/3.86
2.08/2.00
3.38/3.39
2.64/2.40
3.65/3.56
ns
Output Pad Propagation Delay (Low Drive)1
tpo
15pF
35pF
3.43/3.52
6.92/7.20
3.13/3.13
5.72/5.94
3.47/3.34
5.49/5.65
ns
Output Pad Slew Rate (High Drive)1
tps
15pF
35pF
0.87/0.89
0.39/0.40
1.06/1.05
0.47/0.47
1.11/1.11
0.54/0.51
V/ns
Output Pad Slew Rate (Medium Drive)1
tps
15pF
35pF
0.58/0.59
0.26/0.26
0.69/0.71
0.32/0.31
0.77/0.75
0.35/0.35
V/ns
Output Pad Slew Rate (Low Drive)1
tps
15pF
35pF
0.29/0.30
0.13/0.13
0.35/0.35
0.16/0.16
0.40/0.38
0.18/0.17
V/ns
Output Pad di/dt (High Drive)1
di/dt
—
185
91
46
mA/ns
Output Pad di/dt (Medium drive)1
di/dt
—
124
61
31
mA/ns
Output Pad di/dt (Low drive)1
di/dt
—
62
30
16
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.45/0.93
0.6/0.58
0.9/0.88
ns
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%2
tpi
1.2 pF
0.55/0.55
0.71/0.7
1.03/0.98
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.38/0.38
0.58/0.61
1.014/1.07
—
Maximum Input Transition Times3
trm
—
5
ns
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