參數(shù)資料
型號: MCIMX27
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Multimedia Applications Processor(多媒體應(yīng)用處理器)
中文描述: 多媒體應(yīng)用處理器(多媒體應(yīng)用處理器)
文件頁數(shù): 46/118頁
文件大?。?/td> 1159K
代理商: MCIMX27
i.MX27 Data Sheet, Advance Information, Rev. 0.1
46
Preliminary—Subject to Change Without Notice
Freescale Semiconductor
Signal Descriptions
Input current (22 k
PU)
I
IN
V
I
= 0
V
I
= N
VDD
115
0.1
μ
A
μ
A
Input current (47 k
PU)
I
IN
V
I
= 0
V
I
= N
VDD
53
0.1
μ
A
μ
A
Input current (100 k
PU)
I
IN
V
I
= 0
V
I
= N
VDD
25
0.1
μ
A
μ
A
Input current (100 k
PD)
I
IN
V
I
= 0
V
I
= N
VDD
0.25
28
μ
A
μ
A
Tri-state input leakage current
I
Z
V
I
= N
VDD
or 0
I/O = high Z
0.33
±
2
μ
A
High Level DC Input Voltage
V
IH
0.7*V
DDIO
V
DDIO
V
Low-Level DC Input Voltage
V
IL
0
0.3*V
DDIO
V
1
Max High strength should be avoided due to excessive overshoot and ringing.
Table 12. DDR (Double Data Rate) I/O Pads DC Electrical Parameters
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
High-level output voltage
V
OH
I
OH
= -1 mA
NV
DD_DDR
–0.08
V
I
OH
= specified Drive
0.8*NV
DD_
DDR
V
Low-level output voltage
V
OL
I
OL
= 1 mA
0.08
V
I
OL
= specified Drive
0.2*NV
DD_
DDR
V
High-level output current
I
OH
V
OH
=0.8*NV
DD_DDR
Normal
High
Max High
1
DDR Drive
1
1
Max High and DDR Drive strengths should be avoided due to excessive overshoot and ringing.
–3.6
–7.2
–10.8
–14.4
mA
Low-level output current
I
OL
V
OL
=0.2*NV
DD_DDR
Normal
High
Max High
1
DDR Drive
1
3.6
7.2
10.8
14.4
mA
Low-level input current
I
IL
V
I
= 0
1.7
2
μ
A
High-level input current
I
IH
V
I
= NV
DD_DDR
2
μ
A
Tri-state current
I
Z
V
I
= NV
DD_DDR
or 0
I/O = high Z
1.7
2
μ
A
Table 11. GPIO Pads DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
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