參數(shù)資料
型號: MC13214R2
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: SPECIALTY MICROPROCESSOR CIRCUIT, BGA71
封裝: 9 X 9 MM, 1 MM HEIGHT, ROHS COMPLIANT, LGA-71
文件頁數(shù): 59/70頁
文件大?。?/td> 802K
代理商: MC13214R2
MC13211/212/213/214 Technical Data, Rev. 0.0,
62
Freescale Semiconductor
Figure 33. SPI Master Timing (CPHA = 0)
6.4.4
FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
VDD supply.
Table 20. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
Vprog/erase
2.1
3.6
V
Supply voltage for read operation
0 < fBus < 8 MHz
0 < fBus < 20 MHz
VRead
1.8
2.08
3.6
V
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
Byte program time (random location)(2)
tprog
9tFcyc
Byte program time (burst mode)(2)
tBurst
4tFcyc
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
Mass erase time(2)
tMass
20,000
tFcyc
Program/erase endurance3
TL to TH = –40°C to + 85°C
T = 25
°C
10,000
100,000
cycles
Data retention4
tD_ret
15
100
years
SCK
(OUTPUT)
SCK
(OUTPUT)
MISO
(INPUT)
MOSI
(OUTPUT)
MSB IN2
BIT 6 . . . 1
LSB IN
MSB OUT2
LSB OUT
BIT 6 . . . 1
(CPOL = 0)
(CPOL = 1)
1
4
5
6
7
8
9
10
4
2
SS1
(OUTPUT)
3
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