參數(shù)資料
型號： M306V5EESP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, OTPROM, 10 MHz, MICROCONTROLLER, PDIP64
封裝： 0.750 INCH, PLASTIC, SDIP-64
文件頁數(shù)： 36/152頁
文件大小： 1963K
代理商： M306V5EESP
158
ATtiny25/45/85 [DATASHEET]
2586Q–AVR–08/2013
20.7.5
Programming the EEPROM
The EEPROM is organized in pages, see Table 21-11 on page 170. When programming the EEPROM, the data is
latched into a page buffer. This allows one page of data to be programmed simultaneously. The programming algo-
rithm for the EEPROM Data memory is as follows (refer to Table 20-16):
1.
Load Command “Write EEPROM”.
2.
Load EEPROM Page Buffer.
3.
Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Programming” cycle to
finish.
4.
Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been programmed.
5.
End Page Programming by Loading Command “No Operation”.
20.7.6
Reading the Flash
The algorithm for reading the Flash memory is as follows (refer to Table 20-16):
1.
Load Command "Read Flash".
2.
Read Flash Low and High Bytes. The contents at the selected address are available at serial output SDO.
20.7.7
Reading the EEPROM
The algorithm for reading the EEPROM memory is as follows (refer to Table 20-16):
1.
Load Command “Read EEPROM”.
2.
Read EEPROM Byte. The contents at the selected address are available at serial output SDO.
20.7.8
Programming and Reading the Fuse and Lock Bits
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in Table 20-16.
20.7.9
Reading the Signature Bytes and Calibration Byte
The algorithms for reading the Signature bytes and Calibration byte are shown in Table 20-16.
20.7.10
Power-off sequence
Set SCI to “0”. Set RESET to “1”. Turn V
CC power off.
Table 20-16. High-voltage Serial Programming Instruction Set for ATtiny25/45/85
Instruction
Instruction Format
Operation Remarks
Instr.1/5
Instr.2/6
Instr.3
Instr.4
Chip Erase
SDI
SII
SDO
0_1000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Wait after Instr.3 until SDO
goes high for the Chip Erase
cycle to finish.
Load “Write
Flash”
Command
SDI
SII
SDO
0_0001_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter Flash Programming
code.
Load Flash
Page Buffer
SDI
SII
SDO
0_bbbb_bbbb _00
0_0000_1100_00
x_xxxx_xxxx_xx
0_eeee_eeee_00
0_0010_1100_00
x_xxxx_xxxx_xx
0_dddd_dddd_00
0_0011_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1101_00
x_xxxx_xxxx_xx
Repeat after Instr. 1 - 5 until
the entire page buffer is filled
or until all data within the
page is filled.
SDI
SII
SDO
0_0000_0000_00
0_0111_1100_00
x_xxxx_xxxx_xx
Instr 5.
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