參數(shù)資料
型號： M306V5EESP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, OTPROM, 10 MHz, MICROCONTROLLER, PDIP64
封裝： 0.750 INCH, PLASTIC, SDIP-64
文件頁數(shù)： 31/152頁
文件大?。?/td> 1963K
代理商： M306V5EESP
153
ATtiny25/45/85 [DATASHEET]
2586Q–AVR–08/2013
20.5.2
Serial Programming Instruction set
Table 20-12 on page 153 and Figure 20-2 on page 154 describes the Instruction set.
Notes:
1. Not all instructions are applicable for all parts.
Table 20-11. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
Minimum Wait Delay
tWD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
tWD_ERASE
9.0 ms
tWD_FUSE
4.5 ms
Table 20-12. Serial Programming Instruction Set
Instruction/Operation
Instruction Format
Byte 1
Byte 2
Byte 3
Byte4
Programming Enable
$AC
$53
$00
Chip Erase (Program Memory/EEPROM)
$AC
$80
$00
Poll RDY/BSY
$F0
$00
data byte out
Load Instructions
Load Extended Address byte(1)
$4D
$00
Extended adr
$00
Load Program Memory Page, High byte
$48
adr MSB
adr LSB
high data byte in
Load Program Memory Page, Low byte
$40
adr MSB
adr LSB
low data byte in
Load EEPROM Memory Page (page access)
$C1
$00
0000 000aa
data byte in
Read Instructions
Read Program Memory, High byte
$28
adr MSB
adr LSB
high data byte out
Read Program Memory, Low byte
$20
adr MSB
adr LSB
low data byte out
Read EEPROM Memory
$A0
$00
00aa aaaa
data byte out
Read Lock bits
$58
$00
data byte out
Read Signature Byte
$30
$00
0000 000aa
data byte out
Read Fuse bits
$50
$00
data byte out
Read Fuse High bits
$58
$08
$00
data byte out
Read Extended Fuse Bits
$50
$08
$00
data byte out
Read Calibration Byte
$38
$00
data byte out
Write Instructions(6)
Write Program Memory Page
$4C
adr MSB
adr LSB
$00
Write EEPROM Memory
$C0
$00
00aa aaaa
data byte in
Write EEPROM Memory Page (page access)
$C2
$00
00aa aa00
$00
Write Lock bits
$AC
$E0
$00
data byte in
Write Fuse bits
$AC
$A0
$00
data byte in
Write Fuse High bits
$AC
$A8
$00
data byte in
Write Extended Fuse Bits
$AC
$A4
$00
data byte in
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