參數(shù)資料
型號(hào)： M12L64164A-6BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 1M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA54
封裝： 8 X 8 MM, LEAD FREE, VBGA-54
文件頁(yè)數(shù)： 29/45頁(yè)
文件大?。?/td> 831K
代理商： M12L64164A-6BG
ES MT
Note :
1. All input expect CKE & DQM can be don’t care when
CS
is high at the CLK high going edge.
2. Bank active @ read/write are controlled by A13~A12.
M12L64164A
Elite Semiconductor Memory Technology Inc.
Revision
:
3.0
Publication Date
:
Mar. 2007
29/45
A13
A12
Active & Read/Write
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
A13
A12
Operating
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
0
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
1
Enable auto precharge , precharge bank D at end of burst.
4. A10/AP and A13~A12 control bank precharge when precharge is asserted.
A10/AP
A13
A12
Precharge
0
0
0
Bank A
0
0
1
Bank B
0
1
0
Bank C
0
1
1
Bank D
1
X
X
All Banks
相關(guān)PDF資料
PDF描述
M12L64164A-7BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64322A-5BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64164A-6BG2Y 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks
M12L64164A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG2Y 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks
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