參數(shù)資料
型號： M12L64164A-6BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 1M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA54
封裝： 8 X 8 MM, LEAD FREE, VBGA-54
文件頁數(shù)： 1/45頁
文件大?。?/td> 831K
代理商： M12L64164A-6BG
ES MT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Revision
:
3.0
Publication Date
:
Mar. 2007
1/45
SDRAM
FEATURES
1M x 16 Bit x 4 Banks
Synchronous DRAM
y
JEDEC standard 3.3V power supply
y
LVTTL compatible with multiplexed address
y
Four banks operation
y
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
y
All inputs are sampled at the positive going edge of the
system clock
y
DQM for masking
y
Auto & self refresh
y
15.6
μ
s refresh interval
ORDERING INFORMATION
GENERAL DESCRIPTION
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT
54 Pin TSOP (Type II)
(400mil x 875mil )
PRODUCT NO.
MAX FREQ. PACKAGE
Comments
M12L64164A-5TG
200MHz
54 TSOP II
Pb-free
M12L64164A-6TG
166MHz
54 TSOP II
Pb-free
M12L64164A-7TG
143MHz
54 TSOP II
Pb-free
M12L64164A-5BG
200MHz
54 VBGA
Pb-free
M12L64164A-6BG
166MHz
54 VBGA
Pb-free
M12L64164A-7BG
143MHz
54 VBGA
Pb-free
Top View
54 Ball FVBGA (8mmx8mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
A
13
A
12
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
相關PDF資料
PDF描述
M12L64164A-7BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64322A-5BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關代理商/技術參數(shù)
參數(shù)描述
M12L64164A-6BG2Y 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks
M12L64164A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG2Y 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks
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