參數(shù)資料
型號(hào)： K4S160822D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
中文描述： 2Mx8 SDRAM的1M × 8位× 2銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 41/46頁(yè)
文件大?。?/td> 1183K
代理商： K4S160822D
KM48S2120D
CMOS SDRAM
- 41
Rev.1.0 (Mar. 1999)
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Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length=Full page
Row Active
(A-Bank)
Burst Stop
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
Write
(A-Bank)
*Note 2
tBDL
*Note :
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding
memory cell. It is defined by AC parameter of t
RDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
HIGH
tRDL
BA
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
A
10
/AP
DAa0
DAa1
DAa2
DAa3 DAa4
DAb0
DAb1
DAb2
DAb3 DAb4
DAb5
RAa
CAa
CAb
RAa
相關(guān)PDF資料
PDF描述
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622E 1M x 16 SDRAM
K4S161622E-TC10 1M x 16 SDRAM
K4S161622E-TC55 1M x 16 SDRAM
K4S161622E-TC60 1M x 16 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S160822DT-G/F10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/F7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/F8 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/FH 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/FL 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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