參數(shù)資料
型號(hào)： K4S160822D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
中文描述： 2Mx8 SDRAM的1M × 8位× 2銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 37/46頁(yè)
文件大?。?/td> 1183K
代理商： K4S160822D
KM48S2120D
CMOS SDRAM
- 37
Rev.1.0 (Mar. 1999)
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Read & Write Cycle with Auto Precharge I @Burst Length=4
HIGH
Row Active
(A-Bank)
: Don't care
*Note:
¨ When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
auto precharge will start at B Bank read command input point .
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
.
Row Active
(B-Bank)
Read with
Auto Pre
charge
(A-Bank)
Write with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Qa0
Qa1
Qb0
Qb1
Qa0
Qa1
Qb0
Qb1
Ra
Rb
Ca
Ra
Rb
Ra
Cb
Qb2
Qb3
Read without Auto
precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank)*¨
Precharge
(B-Bank)
Ca
Ra
Da0
Da1
Da0
Da1
Qb2
Qb3
相關(guān)PDF資料
PDF描述
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622E 1M x 16 SDRAM
K4S161622E-TC10 1M x 16 SDRAM
K4S161622E-TC55 1M x 16 SDRAM
K4S161622E-TC60 1M x 16 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S160822DT-G/F10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/F7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/F8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/FH 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S160822DT-G/FL 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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