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參數(shù)資料
| 型號： | JS28F128P30T85 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56 |
| 封裝： | 14 X 20 MM, LEAD FREE, TSOP-56 |
| 文件頁數(shù)： | 93/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | JS28F128P30T85 |
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1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
93
Appendix C Common Flash Interface
The Common Flash Interface (CFI) is part of an overall specification for multiple command-set
and control-interface descriptions. This appendix describes the database structure containing the
data returned by a read operation after issuing the CFI Query command (see
Section 9.2, “Device
Commands” on page 50
). System software can parse this database structure to obtain information
about the flash device, such as block size, density, bus width, and electrical specifications. The
system software will then know which command set(s) to use to properly perform flash writes,
block erases, reads and otherwise control the flash device.
C.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device.
This section describes the device’s CFI-compliant interface that allows access to Query data.
Query data are presented on the lowest-order data outputs (DQ
7-0
) only. The numerical offset value
is the address relative to the maximum bus width supported by the device. On this family of
devices, the Query table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,” appear on
the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00h data on upper
bytes. The device outputs ASCII “Q” in the low byte (DQ
7-0
) and 00h in the high byte (DQ
15-8
).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
Table 32.
Example of Query Structure Output of x16- Devices
Table 31.
Summary of Query Structure Output as a Function of Device and Mode
Device
Hex
Offset
Hex
Code
ASCII
Value
Device Addresses
00010:
51
“Q”
00011:
52
“R”
00012:
59
“Y”
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JS28F128P30T85A | 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| JS28F128P30TF75A | 功能描述:IC FLASH 128MBIT 65NM 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| JS28F128P33B85A | 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| JS28F128P33BF700 | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays |
| JS28F128P33BF70A | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 128MBIT 70NS 56TSOP 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 128MBIT 56TSOP 制造商:Micron Technology Inc 功能描述:FLASH, PARALLEL, 128MBIT, 56TSOP 制造商:Micron Technology Inc 功能描述:FLASH, PARALLEL, 128MBIT, 56TSOP, Memory Type:Flash - NOR, Memory Size:128Mbit, Memory Configuration:8M x 16, Supply Voltage Min:2.3V, Supply Voltage Max:3.6V, Memory Case Style:TSOP, No. of Pins:56, Access Time:70ns, IC Interface , RoHS Compliant: Yes 制造商:Micron Technology Inc 功能描述:Flash Memory 128Mb,3V,70ns,TSOP56 |
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