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參數(shù)資料
| 型號(hào)： | JS28F128P30T85 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56 |
| 封裝： | 14 X 20 MM, LEAD FREE, TSOP-56 |
| 文件頁(yè)數(shù)： | 48/102頁(yè) |
| 文件大小： | 1609K |
| 代理商： | JS28F128P30T85 |
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1-Gbit P30 Family
April 2005
48
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
9.0
Device Operations
This section provides an overview of device operations. The system CPU provides control of all in-
system read, write, and erase operations of the device via the system bus. The on-chip Write State
Machine (WSM) manages all block-erase and word-program algorithms.
Device commands are written to the Command User Interface (CUI) to control all flash memory
device operations. The CUI does not occupy an addressable memory location; it is the mechanism
through which the flash device is controlled.
9.1
Bus Operations
CE# low and RST# high enable device read operations. The device internally decodes upper
address inputs to determine the accessed block. ADV# low opens the internal address latches. OE#
low activates the outputs and gates selected data onto the I/O bus.
In asynchronous mode, the address is latched when ADV# goes high or continuously flows through
if ADV# is held low. In synchronous mode, the address is latched by the first of either the rising
ADV# edge or the next valid CLK edge with ADV# low (WE# and RST# must be V
IH
; CE# must
be V
IL
).
Bus cycles to/from the P30 device conform to standard microprocessor bus operations.
Table 19
summarizes the bus operations and the logic levels that must be applied to the device control signal
inputs.
9.1.1
Reads
To perform a read operation, RST# and WE# must be deasserted while CE# and OE# are asserted.
CE# is the device-select control. When asserted, it enables the flash memory device. OE# is the
data-output control. When asserted, the addressed flash memory data is driven onto the I/O bus.
See
Section 10.0, “Read Operations” on page 53
for details on the available read modes, and see
Section 14.0, “Special Read States” on page 75
for details regarding the available read states.
Table 19.
Bus Operations Summary
Bus Operation
RST#
CLK
ADV#
CE#
OE#
WE#
WAIT
DQ[15:0]
Notes
Read
Asynchronous
V
IH
V
IH
X
L
L
L
H
Deasserted
Output
Synchronous
Running
L
L
L
H
Driven
Output
Write
V
IH
X
L
L
H
L
High-Z
Input
1
Output Disable
V
IH
V
IH
X
X
L
H
H
High-Z
High-Z
2
Standby
X
X
H
X
X
High-Z
High-Z
2
Reset
V
IL
X
X
X
X
X
High-Z
High-Z
2,3
Notes:
1.
2.
3.
Refer to the
Table 20, “Command Bus Cycles” on page 50
for valid DQ[15:0] during a write operation.
X = Don’t Care (H or L).
RST# must be at V
SS
± 0.2 V to meet the maximum specified power-down current.
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| JS28F128P30TF75A | 功能描述:IC FLASH 128MBIT 65NM 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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| JS28F128P33BF700 | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays |
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