參數(shù)資料
型號： JS28F128P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, LEAD FREE, TSOP-56
文件頁數(shù)： 29/102頁
文件大?。?/td> 1609K
代理商： JS28F128P30T85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
29
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
Parameter
Maximum Rating
Notes
Temperature under bias
–40 °C to +85 °C
1
Storage temperature
–65 °C to +125 °C
Voltage on any signal (except VCC, VPP)
–0.5 V to +4.1 V
2
VPP voltage
–0.2 V to +10 V
2,3,4
VCC voltage
–0.2 V to +2.5 V
2
VCCQ voltage
–0.2 V to +4.1 V
2
Output short circuit current
100 mA
5
Notes:
1.
2.
Temperature for 1-Gbit SCSP is –30 °C to +85 °C.
Voltages shown are specified with respect to V
. Minimum DC voltage is –0.5 V on input/output
signals and –0.2 V on V
, V
, and V
. During transitions, this level may undershoot to –2.0 V for
periods < 20 ns. Maximum DC voltage on V
is V
+ 0.5 V, which, during transitions, may
overshoot to V
+ 2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V
CCQ
is V
+ 0.5 V, which, during transitions, may overshoot to V
+ 2.0 V for periods < 20 ns.
Maximum DC voltage on V
may overshoot to +11.5 V for periods < 20 ns.
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling
capability.
Output shorted for no more than one second. No more than one output shorted at a time.
3.
4.
5.
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