參數(shù)資料
型號(hào): JS28F128P30T85
廠商: INTEL CORP
元件分類: DRAM
英文描述: Intel StrataFlash Embedded Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝: 14 X 20 MM, LEAD FREE, TSOP-56
文件頁(yè)數(shù): 80/102頁(yè)
文件大?。?/td> 1609K
代理商: JS28F128P30T85
1-Gbit P30 Family
April 2005
80
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
Figure 36.
Write State Machine—Next State Table (Sheet 3 of 6)
Setup
Busy
Setup
Busy
Suspend
Setup
BP Load 1
BP Load 2
BP
Confirm
BP Busy
BP
Suspend
Setup
Busy
Suspend
Erase
Word
Program
OTP
Ready
Current Chip
State
(7)
BP
Lock/CR Setup
OTP
Setup
(4)
Lock
Block
Confirm
(8)
Lock-Down
Block
Confirm
(8)
Write RCR
Confirm
(8)
Block Address
(WA0)
9
Illegal Cmds or
BEFP Data
(1)
(C0H)
(01H)
(2FH)
(03H)
(XXXXH)
(all other codes)
OTP
Setup
Ready
(Lock
Error)
Ready
(Lock
Block)
Ready
(Lock Down
Blk)
Ready
(Set CR)
Ready
N/A
Ready
Ready (BP Load 2 BP Load 2
Ready
BP Confirm if
Data load into
Program Buffer is
complete; ELSE
BP Load 2
Ready (Error)
(Proceed if
unlocked or lock
error)
Ready (Error)
Ready
Ready
N/A
BP Confirm if Data load into Program Buffer is
complete; ELSE BP load 2
Ready (Error)
BP Busy
Erase Busy
Word Program Suspend
BP Load 1
BP Load 2
OTP Busy
Word Program Busy
Word Program Busy
WSM
Operation
Completes
Command Input to Chip and resulting
Chip
Next State
N/A
Ready (Lock Error)
Ready
BP Suspend
Ready (Error)
Erase Suspend
N/A
N/A
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