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參數(shù)資料
| 型號(hào)： | iMC010FLSA |
| 廠商： | Intel Corp. |
| 英文描述： | 5 Volt Series 2 Flash Memory Card(5V系列2閃速存儲(chǔ)器卡) |
| 中文描述： | 5伏2系列閃存卡（5V的系列2閃速存儲(chǔ)器卡） |
| 文件頁數(shù)： | 9/51頁 |
| 文件大小： | 827K |
| 代理商： | IMC010FLSA |
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E
iMC002/004/010/020FLSA
9
PRELIMINARY
Pin
Signal
I/O
Function
Active
57
VS
2
O
Voltage Sense
2
N.C.
58
RST
I
Reset
HI
59
WAIT#
O
Extend Bus
Cycle
LO
60
RFU
Reserved
61
REG#
I
Register Select
LO
62
BVD
2
O
Batt. Volt Det 2
Pin
Signal
I/O
Function
Active
63
BVD
1
O
Batt. Volt Det 1
64
DQ
8
I/O
Data Bit 8
65
DQ
9
I/O
Data Bit 9
66
DQ
10
I/O
Data Bit 10
67
CD
2
#
O
Card Detect 2
LO
68
GND
Ground
Table 2. Series 2 Flash Memory Card Pin Descriptions
Symbol
Type
Name and Function
A
0
–A
25
I
ADDRESS INPUTS:
A
0
through A
25
are address bus lines which enable direct
addressing of 64 megabytes of memory on a card. A
0
is not used in word access
mode. A
24
is the most significant address bit. Note: A
25
is a no-connect but should
be provided on host side.
DQ
0
–DQ
15
I/O
DATA INPUT/OUTPUT:
DQ
0
through DQ
15
constitute the bidirectional data bus.
DQ
15
is the most significant bit.
CE
1
#, CE
2
#
I
CARD ENABLE 1, 2:
CE
1
# enables even bytes, CE
2
# enables odd bytes.
Multiplexing A
0
, CE
1
# and CE
2
# allows 8-bit hosts to access all data on DQ
0
through DQ
7
. (See Table 3 for a more detailed description.)
OE#
I
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
WE#
I
WRITE ENABLE:
Active low signal gating write data to the memory card.
RDY/BSY#
O
READY/BUSY OUTPUT:
Indicates status of internally timed erase or write
activities. A high output indicates the memory card is ready to accept accesses. A
low output indicates that a device(s) in the memory card is(are) busy with internally
timed activities. See text for an alternate function (
Ready-Busy Mode Register
).
CD
1
# & CD
2
#
O
CARD DETECT 1, 2:
These signals provide for correct card insertion detection.
They are positioned at opposite ends of the card to detect proper alignment. The
signals are connected to ground internally on the memory card and will be forced
low whenever a card is placed in the socket. The host socket interface circuitry shall
supply 10K or larger pull-up resistors on these signal pins.
WP
O
WRITE PROTECT:
Write Protect reflects the status of the Write-Protect switch on
the memory card. WP set high = write protected, providing internal hardware write
lockout to the flash array.
V
PP1
, V
PP2
WRITE/ERASE POWER SUPPLY:
(12 V nominal) for erasing memory array blocks
or writing data in the array. They must be 12 V to perform an erase/write operation.
V
CC
CARD POWER SUPPLY
(5 V nominal) for all internal circuitry.
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