參數(shù)資料
型號: iMC010FLSA
廠商: Intel Corp.
英文描述: 5 Volt Series 2 Flash Memory Card(5V系列2閃速存儲器卡)
中文描述: 5伏2系列閃存卡(5V的系列2閃速存儲器卡)
文件頁數(shù): 43/51頁
文件大?。?/td> 827K
代理商: IMC010FLSA
E
22.7.2
iMC002/004/010/020FLSA
43
PRELIMINARY
WRITE OPERATIONS
—COMMON AND ATTRIBUTE MEMORY
(1)
Symbol
JEDEC
PCMCIA
Parameter
Notes
Min
Max
Unit
t
AVAV
t
WC
Write Cycle Time
150
ns
t
WLWH
t
w
(WE)
Write Pulse Width
80
ns
t
AVWL
t
su
(A)
Address Setup Time
20
ns
t
AVWH
t
su
(A-WEH)
Address Setup Time for WE#
100
ns
t
VPWH
t
vps
V
PP
Setup to WE# Going High
100
ns
t
ELWH
t
su
(CE-WEH)
Card Enable Setup Time for WE#
100
ns
t
DVWH
t
su
(D-WEH)
Data Setup Time for WE#
50
ns
t
WHDX
t
h
(D)
Data Hold Time
20
ns
t
WHAX
t
rec
(WE)
Write Recover Time
20
ns
t
WHRL
WE# High to RDY/BSY#
120
ns
t
WHQV1
Duration of Data Write Operation
6
μs
t
WHQV2
Duration of Block Erase Operation
0.3
sec
t
QVVL
V
PP
Hold from Operation Complete
2
0
ns
t
WHGL
t
h
(OE-WE)
Write Recovery before Read
10
ns
t
RHWL
Reset-PwrDwn Recovery to WE# Going
Low
1
μs
NOTES:
1.
Read timing characteristics during erase and data write operations are the same as during read-only operations. Refer to
Read-Only Operations
—Common and Attribute Memory
.
Refer to text on data-write and block-erase operations.
2.
22.7.3
BLOCK ERASE AND DATA WRITE PERFORMANCE
Parameter
Notes
Min
Typ
(3)
Max
Unit
Block Pair Erase Time
(1)
2, 4
1.1
10
sec
Block Pair Write Time
2, 4
0.5
2.1
sec
Byte/Word Write Time
4
4.8 μs
6 μs
3 ms
NOTES:
1.
2.
3.
4.
Individual blocks can be erased 100,000 times.
Excludes System-Level Overhead.
25 °C, 12.0 V V
PP
.
Monitor ready/busy registers for the completion of a write/erase command.
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