參數(shù)資料
型號(hào): iMC010FLSA
廠商: Intel Corp.
英文描述: 5 Volt Series 2 Flash Memory Card(5V系列2閃速存儲(chǔ)器卡)
中文描述: 5伏2系列閃存卡(5V的系列2閃速存儲(chǔ)器卡)
文件頁(yè)數(shù): 45/51頁(yè)
文件大?。?/td> 827K
代理商: IMC010FLSA
E
22.7.4
iMC002/004/010/020FLSA
45
PRELIMINARY
CE#-CONTROLLED WRITE OPERATIONS
—COMMON AND ATTRIBUTE MEMORY
(1)
Symbol
JEDEC
PCMCIA
Parameter
Notes
Min
Max
Unit
t
AVAV
t
WC
Write Cycle Time
1
150
ns
t
ELEH
t
w
(WE)
Chip Enable Pulse Width
1
80
ns
t
AVEL
t
su
(A)
Address Setup Time
1
20
ns
t
AVEH
t
su
(A-WEH)
Address Setup Time for CE#
1
100
ns
t
VPEH
t
vps
V
PP
Setup to CE# Going High
1
100
ns
t
WLEH
t
su
(CE-WEH)
Write Enable Setup Time for CE#
1
100
ns
t
DVEH
t
su
(D-WEH)
Data Setup Time for CE#
1
50
ns
t
EHDX
t
h
(D)
Data Hold Time
1
20
ns
t
EHAX
t
rec
(WE)
Write Recover Time
1
20
ns
t
EHRL
CE# High to RDY/BSY#
1
120
ns
t
EHQV1
Duration of
Data Write
Duration of Data Write Operation
1
6
μs
t
EHQV2
Duration of
Erase
Duration of Block Erase Operation
1
0.3
sec
t
QVVL
V
PP
Hold from Operation Complete
1, 2
0
ns
t
EHGL
t
h
(OE-WE)
Write Recovery before Read
1
10
ns
t
RHEL
Reset-PwrDwn Recovery to CE# Going Low
1
μs
NOTES:
1.
Read timing characteristics during erase and data write operations are the same as during read-only operations. Refer o
Read-Only Operations
—Common and Attribute Memory
.
Refer to text on data-write and block-erase operations.
2.
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