參數(shù)資料
型號: IBM041813PQKB
廠商: IBM Microeletronics
英文描述: 64K X 18 Burst Pipeline SRAM(1M(64K X 18)高性能同步可猝發(fā)管線式靜態(tài)RAM)
中文描述: 64K的X 18爆裂管道的SRAM(100萬(64K的X 18)高性能同步可猝發(fā)管線式靜態(tài)內(nèi)存)
文件頁數(shù): 9/15頁
文件大小: 217K
代理商: IBM041813PQKB
IBM041813PQKB
Preliminary
64K X 18 BURST PIPELINE SRAM
50H5206
SA14-4665-02
Revised 9/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 15
AC Test Loading
50
VL = 1.5 V
50
DQ
Fig. 1 Test Equivalent Load
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
15
45
30
75
105
picoFarads
-0.5
-1.0
60
90
n
The derating curve above is for a purely capacitive load on the output driver. For example, a
part specified at 4 ns access time will behave as though it has a 4.5 ns access time if a 30 pF
load with no DC component was attached to the output driver. The access times guaranteed
in the datasheets are based on a 50 ohm terminated test load. For unterminated loads the
derating curve should be used. This curve is based on nominal process conditions with worst
case parameters V
CC
= 3.14 V, T
A
= 70
°
C.
30 pF
Output Capacitive Load Derating Curve
351
DQ
Fig. 2 Test Equivalent Load
5 pF
+ 3.3 V
317
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