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| 型號： | HYB18L256160BF-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | RT ANG PCB CONT .40/1.295 BULK |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 38/49頁 |
| 文件大?。?/td> | 1327K |
| 代理商： | HYB18L256160BF-7.5 |
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t
SREX
HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Data Sheet
38
V1.4, 2004-04-30
2.4.9.2
SELF REFRESH
Figure 43
SELF REFRESH Entry Command
The SELF REFRESH command can be used to retain
data in the
Mobile-RAM
, even if the rest of the system
is powered down. When in the self refresh mode, the
Mobile-RAM
retains data without external clocking. The
SELF REFRESH command is initiated like an AUTO
REFRESH command except CKE is LOW. Input
signals except CKE are “Don’t Care” during SELF
REFRESH.
The procedure for exiting SELF REFRESH requires a
stable clock prior to CKE returning HIGH. Once CKE is
HIGH, NOP commands must be issued for
t
RC
because
time is required for a completion of any internal refresh
in progress.
The use of SELF REFRESH mode introduces the
possibility that an internally timed event can be missed
when CKE is raised for exit from SELF REFRESH
mode. Upon exit from SELF REFRESH an extra AUTO
REFRESH command is recommended.
Figure 44
Self Refresh Entry and Exit
= Don't Care
CS
CKE
CLK
A0-A12
BA0,BA1
CAS
WE
RAS
Table 13
Parameter
Timing Parameters for AUTO REFRESH and SELF REFRESH
Symbol
- 7.5
Units
Notes
min.
67
19
–
1
max.
–
–
64
–
ACTIVE to ACTIVE command period
PRECHARGE command period
Refresh period (
8192
rows)
Self refresh exit time
t
RC
t
RP
t
REF
t
SREX
ns
ns
ms
t
CK
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
1)
t
RP
> t
RC
t
RC
t
RC
Self Refresh
Entry Command
Self Refresh
Exit Command
Exit from
Self Refresh
Any Command
(Auto Refresh
Recommended)
= Don't Care
A10 (AP)
Pre All
Row n
CLK
CKE
Command
NOP
ARF
NOP
NOP
NOP
PRE
ARF
ACT
NOP
Address
Ba A,
Row n
DQ
High-Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160BFL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BFX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L2561660BF-7.5 | 制造商:QIMONDA 功能描述: |
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| HYB18L256169BF-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Mobile-RAM |
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